2011
DOI: 10.1016/j.jallcom.2011.02.134
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Microwave dielectric properties and its compatibility with silver electrode of Li2MgTi3O8 ceramics

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Cited by 58 publications
(18 citation statements)
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“…These applications demand microwave substrate materials with high quality factor (Q × f) to achieve high selectivity, low dielectric constant (ε r ) to reduce the delay time of electronic signal, and nearly zero temperature coefficient of resonant frequency ( f ) for frequency stability. Promising candidates include as Mg 2 SiO 4 (Q × f = 40,000-240,000 GHz, ε r = 6-7, f = −60 ppm/ • C) [1,2], Al 2 O 3 (Q × f = 680,000 GHz, ε r = 10, [3,19], Mg 2 SnO 4 (Q × f = 55,100 GHz, ε r = 8.41, f = −62 ppm/ • C) [11], Ba(Zn 1/3 Ta 2/3 )O 3 (Q × f = 120 THz) [23], Li 2 MgTi 3 O 8 (Q × f = 36,200 GHz, ε r = 26, f = −2 ppm/ • C) [24] and other microwave dielectrics materials [25][26][27][28][29][30][31][32][33]. Among these materials, forsterite Mg 2 SiO 4 has attracted a great attention with low dielectric constant and loss tangent.…”
Section: Introductionmentioning
confidence: 99%
“…These applications demand microwave substrate materials with high quality factor (Q × f) to achieve high selectivity, low dielectric constant (ε r ) to reduce the delay time of electronic signal, and nearly zero temperature coefficient of resonant frequency ( f ) for frequency stability. Promising candidates include as Mg 2 SiO 4 (Q × f = 40,000-240,000 GHz, ε r = 6-7, f = −60 ppm/ • C) [1,2], Al 2 O 3 (Q × f = 680,000 GHz, ε r = 10, [3,19], Mg 2 SnO 4 (Q × f = 55,100 GHz, ε r = 8.41, f = −62 ppm/ • C) [11], Ba(Zn 1/3 Ta 2/3 )O 3 (Q × f = 120 THz) [23], Li 2 MgTi 3 O 8 (Q × f = 36,200 GHz, ε r = 26, f = −2 ppm/ • C) [24] and other microwave dielectrics materials [25][26][27][28][29][30][31][32][33]. Among these materials, forsterite Mg 2 SiO 4 has attracted a great attention with low dielectric constant and loss tangent.…”
Section: Introductionmentioning
confidence: 99%
“…However, the reduction of sintering temperature of an original ceramic is usually accompanied by an abrupt degradation of the dielectric properties [3]. Therefore, there is a considerable interest in the search of new dielectric materials with low sintering temperature [7][8][9].…”
Section: Introductionmentioning
confidence: 99%
“…Among these methods, low-melting temperature glass addition for liquid phase sintering is lower in cost and easier to handle than the other two. 6,7 Recently, many studies have been focused on the Li2O-MOx (A = Zn, Mg, Co)-TiO2 compounds. The Li2ZnTi3O8 material was first reported as a low loss dielectric for microwave applications by George and Sebastian.…”
Section: Introductionmentioning
confidence: 99%