Microwave dielectric properties and thermal conductivities of low-temperature sintered (Na1-K )2MoO4 (x ≤ 0.2) ceramics

Gupta, Renu; Kim, Dong Hyun; Kim, Hyo Tae

doi:10.1016/j.ceramint.2022.02.062

Cited by 8 publications

(1 citation statement)

References 49 publications

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“…Normally, the Qf value is affected by intrinsic factors such as lattice vibrational modes, bond energy, oxygen octahedron deformation and other parameters related to the crystal structure, and extrinsic ones, such as the secondary phase, porosity, lattice defects, and so on. [24][25][26] Those multi-factors should be comprehensively considered in the analysis of Qf in (Hf 1−x Sn x )O 2 ceramics.…”

Section: Resultsmentioning

confidence: 99%

Structure evolution and microwave dielectric characteristics of Hf₁₋_xSn_xO₂ ceramics

Ding,

Huang,

et al. 2024

J Am Ceram Soc.

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High Q (Hf1−xSnx)O2 ceramics were prepared via a standard solid‐state reaction route, and the microwave dielectric characteristics were investigated systematically together with the structure evolution. With increasing x, the structure changed from HfO2 (monoclinic in space group P21/c, x = 0 and 0.03) to Hf0.77Sn0.23O2 (orthorhombic in space group Pbcn, x = 0.23), while the two‐phase structure: HfO2 major phase and Hf0.77Sn0.23O2 secondary phase, was determined for x = 0.05–0.21, and Hf0.77Sn0.23O2 major phase combined with SnO2 tetragonal secondary phase in space group P42/mnm was confirmed for x = 0.30–0.40. The Qf value was significantly increased from 24,500 to 167,650 GHz by Sn‐substitution, and the best combination of microwave dielectric characteristics was obtained in Hf0.77Sn0.23O2 ceramics: εr = 17.2, Qf = 167 650 GHz at 9.6 GHz and 230 710 GHz at 26.1 GHz, and τf = −52.6 ppm/°C. The dielectric loss was deeply linked with the structure stability and lattice‐distortion. Also, the phase composition, the bond strength, as well as the degree of covalency, had a tight connection with dielectric loss. The present ceramics were expected to be the promising candidates as low‐εr microwave dielectric ceramics.

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Section: Resultsmentioning

confidence: 99%

Structure evolution and microwave dielectric characteristics of Hf₁₋_xSn_xO₂ ceramics

Ding,

Huang,

et al. 2024

J Am Ceram Soc.

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Low-temperature sintering and high-frequency dielectric properties of ZTS ceramics with V2O5–B2O3 addition

Wang,

Liu,

Yang

et al. 2023

J Mater Sci: Mater Electron

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Structure, Dielectric Properties, and Grain Growth Kinetics of MO-ZrO2-Ta2O5 (M = Zn, Co) Microwave Ceramics

Jiang

Zhang

Song

et al. 2023

J. Electron. Mater.

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Microwave dielectric properties and thermal conductivities of low-temperature sintered (Na1-K )2MoO4 (x ≤ 0.2) ceramics

Cited by 8 publications

References 49 publications

Structure evolution and microwave dielectric characteristics of Hf₁₋_xSn_xO₂ ceramics

Structure evolution and microwave dielectric characteristics of Hf₁₋_xSn_xO₂ ceramics

Low-temperature sintering and high-frequency dielectric properties of ZTS ceramics with V2O5–B2O3 addition

Structure, Dielectric Properties, and Grain Growth Kinetics of MO-ZrO2-Ta2O5 (M = Zn, Co) Microwave Ceramics

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Microwave dielectric properties and thermal conductivities of low-temperature sintered (Na1-K )2MoO4 (x ≤ 0.2) ceramics

Cited by 8 publications

References 49 publications

Structure evolution and microwave dielectric characteristics of Hf1−xSnxO2 ceramics

Structure evolution and microwave dielectric characteristics of Hf1−xSnxO2 ceramics

Low-temperature sintering and high-frequency dielectric properties of ZTS ceramics with V2O5–B2O3 addition

Structure, Dielectric Properties, and Grain Growth Kinetics of MO-ZrO2-Ta2O5 (M = Zn, Co) Microwave Ceramics

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Structure evolution and microwave dielectric characteristics of Hf₁₋_xSn_xO₂ ceramics

Structure evolution and microwave dielectric characteristics of Hf₁₋_xSn_xO₂ ceramics