“…These applications demand microwave substrate materials with high quality factor (Q × f) to achieve high selectivity, low dielectric constant (ε r ) to reduce the delay time of electronic signal, and nearly zero temperature coefficient of resonant frequency ( f ) for frequency stability. Promising candidates include as Mg 2 SiO 4 (Q × f = 40,000-240,000 GHz, ε r = 6-7, f = −60 ppm/ • C) [1,2], Al 2 O 3 (Q × f = 680,000 GHz, ε r = 10, [3,19], Mg 2 SnO 4 (Q × f = 55,100 GHz, ε r = 8.41, f = −62 ppm/ • C) [11], Ba(Zn 1/3 Ta 2/3 )O 3 (Q × f = 120 THz) [23], Li 2 MgTi 3 O 8 (Q × f = 36,200 GHz, ε r = 26, f = −2 ppm/ • C) [24] and other microwave dielectrics materials [25][26][27][28][29][30][31][32][33]. Among these materials, forsterite Mg 2 SiO 4 has attracted a great attention with low dielectric constant and loss tangent.…”