2009
DOI: 10.1016/j.jallcom.2008.07.070
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Microwave dielectric properties of SiC(B) solid solution powder prepared by sol–gel

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Cited by 56 publications
(32 citation statements)
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“…In the last decade, efforts have been made by various researchers to synthesize fine and pure SiC powder by alternative methods like sol-gel, plasma, laser, chemical vapor deposition (CVD), selfpropagatinghigh-temperature synthesis [229][230][231][232][233]. Nano-sized SiC rods have also been prepared using Si and C as the reactants at the temperature of 1200°C.…”
Section: Preparation Of Nano Sicmentioning
confidence: 99%
“…In the last decade, efforts have been made by various researchers to synthesize fine and pure SiC powder by alternative methods like sol-gel, plasma, laser, chemical vapor deposition (CVD), selfpropagatinghigh-temperature synthesis [229][230][231][232][233]. Nano-sized SiC rods have also been prepared using Si and C as the reactants at the temperature of 1200°C.…”
Section: Preparation Of Nano Sicmentioning
confidence: 99%
“…The manufacture of microwave absorbing materials involves the use of compounds capable of generating dielectric and/or magnetic losses when impinged by an electromagnetic wave. Extensive study has been carried out to develop microwave absorbing materials with high efficiency and new absorption materials [1,[5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. By controlling the material type (dielectric or magnetic) and thickness, loss factor and impedances, and internal optical design, performance of the microwave absorbing material can be optimized for a single narrow band frequency, multiple frequencies, or over a broad frequency spectrum [23].…”
Section: Introductionmentioning
confidence: 99%
“…Silicon carbide (SiC) is a good electromagnetic wave absorbing material [11][12][13][14], especially for nano-sized particles of SiC which are also useful for the improvement of mechanical and thermal properties of nanocomposite materials [15][16][17]. The relationship between dielectric behavior and interfacial polarization of nano-sized SiC materials has been studied [12,18,19], and the dielectric behaviors of nano-sized SiC doped with trace elements, such as B, N and Al, are much different from that of undoped nano-sized SiC [14,18,20,21].…”
Section: Introductionmentioning
confidence: 99%