Microwave electrical conductivity and structure of chalcogenide glasses

Investigations of the conduction mechanism and relaxation properties of semiconductor Sm doped a-Se films

“…where the real dielectric constant ε and dielectric loss ε are given by the following relations [23,24]: where ε 0 is the permittivity of free space (ε 0 = 8.85 × 10 −12 F m −1 ) and tan δ is the loss tangent. Applying equation ( 18) to the investigated σ (ω) data, the values of ε and ε , in the temperature range 311-100 K, could be calculated.…”

Electrical conduction and dielectric relaxation in semiconductor SeSm0.005

“…The complex dielectric constant ε * = ε − iε is often used to describe the relaxation process in chalcogenide semiconductors. The real dielectric constant ε and dielectric loss factor ε are calculated using the following equations [22]…”

“…Whereas, for a distribution of relaxation times, 0 < α < 1, the larger α is larger in the extent of the distribution of relaxation times. Knowing τ 0 , one can calculate the value of the molecular relaxation time (τ ) using the relation [22]:…”

A. C. Conduction in Chalcogenide Glasses

“…Of the pure elemental materials, only amorphous Se has been studied [8,[12][13][14][15][16][17][18], although 19] and Se-Te-Tl alloys [20,21] have also been examined. Of the arsenic chalcogenide alloys, stoichiometric AS2Se3 [8,[12][13][14][15]18,[22][23][24][25][26][27][28][29], As-Se alloys [30][31][32], stoichiometric AS2Se3 [8,12,14,15,18,22,27,31,33,34], As-S alloys [12,31], stoichiometric AS2Te3 [35][36][37][38][39][40][41][42], As-Se-Te [43,44J and As-S-Te alloys [45] have all been studied.…”

“…This situation has been considered previously for the case of amorphous arsenic [87,88] (29) wher~ Nl is the density of DO centers (=N o ) and N2 is the density of D centers (=N_), W M is the maximum thermal energy to place an electron from the valen~e band onto DO (=W l ). For materials in which the band gap and hence WI is small (e.g., AS2Te3)' Eq.…”