Utilization of the spin degree of freedom in metallic, semiconducting, and insulating materials is an active pursuit for spin‐based devices. Besides some existing devices, many new ones have been proposed on the basis of spin‐dependent transport. For these devices to become reality, new materials and methods for efficient injection, manipulation, and detection of electron spins are required. In this article, we present an overview of the research progress in inorganic spintronic materials, with emphasis on their structural and magnetic properties. The materials discussed include perovskite‐type oxides, spinel ferrites, transition metal monoxides, iron oxides, nickel oxides, chromium oxides, layered ruthenates, and chromium‐based chalcogenides. Recent advancements related to single‐phase multiferroic materials are also presented.