Microwave-induced patterns inn-GaAs and their photoluminescence imaging

Abstract

Using the technique of photoluminescence imaging, self-organized patterns of high-electron density in homogeneous n-GaAs layers under homogeneous microwave irradiation are studied. The structures are shown to be analogous to current filaments in a static electric field. The symmetry of the microwave induced patterns is not constrained by the current feeding electrodes. It is, however, concluded that a feedback mechanism exists between the formation of high-conducting structures and the homogeneity of the incident microwave irradiation.

Dissipative solitons

“…We only mention the works on ZnTe [187,188], GaAs 1Àx P x [187,189], n-GaAs [77,190], on p-Ge [191], on reverse biased 6H-SiC pn-diodes [77,192], on reverse biased Si pin-diodes [77,193], on InSb diodes [194], on bulk InSb and Te [195,196], and on bulk p-Ge [197]. Self-organized spots in n-GaAs at low temperature generated in a microwave field [198,199] are also interesting. Finally we draw attention to the investigations of the dynamics of filaments by Aoki [200,201].…”

Mechanism of microwave-induced photoluminescence modulation and optically detected resonances due to a two-dimensional electron gas in a heterostructure

“…Hot electrons can cause a variety of secondary processes such as electron ͑hole͒ and exciton density variations ͑␦n , ␦n x ͒, [17][18][19] an increased population of nonequilibrium low-energy acoustic phonons, 7,[20][21][22] and lattice temperature variations ⌬T L . 1,14 Each mw-induced process has a specific time evolution: T e and nonequilibrium phonons relax in time scales of 10 −9 s ͑Refs.…”