Microwave Integrated CMOS Oscillators on Silicon-on-Insulator Substrate

Goffioul, Michael; Raskin, Jean‐Pierre; Vanhoenacker‐Janvier, Danielle

doi:10.1109/euma.2000.338682

Cited by 3 publications

(3 citation statements)

References 11 publications

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“…Design guidelines have been proposed to optimize the geometric parameters of microstrip spiral inductors, such as strip width, spacing between the strips, and the gap between groups of coupled lines on opposing sides (the hole at the middle of the spiral inductor) [13], [10]. Despite these technical improvements, only a few successful RF analog circuits have been reported in the literature [14]- [18]. The slow emergence of CMOS technologies into the market of RF circuits is in part linked to the lack of accurate and rapid simulation tools for passive elements.…”

Section: Introductionmentioning

confidence: 99%

An improved multiline analysis for monolithic inductors

Dehan

Raskin

Huynen

et al. 2003

IEEE Trans. Microwave Theory Techn.

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This paper presents a new efficient multiline model for monolithic inductors. A preliminary model was developed by Huynen, which divided the spiral in sections of coupled transmission lines whose parameters are calculated by a variational principle. This model has been improved for inductors with high trace width-to-gap ratios and it has been demonstrated to be adequate for predicting -parameters characterizing the inductor over a wide frequency band, even above its self-resonant frequency. This new design tool is shown to be useful for analyzing and optimizing inductor topologies built on both insulating and semiconducting substrates.Index Terms-Inductor model, integrated circuit (IC) modeling, substrate loss.

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Section: Introductionmentioning

confidence: 99%

An improved multiline analysis for monolithic inductors

Dehan

Raskin

Huynen

et al. 2003

IEEE Trans. Microwave Theory Techn.

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“…The purpose of this work is to analyse the static and dynamic characteristics of 0.25 µm gate-length FD SOI n-MOSFETs. The devices studied in this paper have already been used for designing various classical analogue and digital circuits: operational transconductance amplifiers, base band circuits (a sigma-delta modulator, a rf quadrature generator, low pass filters, etc), microwave oscillators at 6 and 12 GHz [6] and a 2 GHz GSM receiver [7], showing an exceptional dynamic behaviour and one of the best noise microwave performances reported in the literature [8]. Due to the lack of simulation tools, the topology of the circuits is not fully optimized nor are the devices themselves.…”

Section: Introductionmentioning

confidence: 99%

Numerical and experimental study of a 0.25 µm fully-depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behaviour

Rengel

Matéos

Pardo

et al. 2002

Semicond. Sci. Technol.

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We investigate the static and dynamic characteristics of a 0.25 µm gate-length fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor. Considering properly the physical topology of the transistor with its accesses, numerical simulations are performed using a two-dimensional ensemble Monte Carlo simulator and these are compared with experimental results. Moreover, in the simulation we include important effects that appear in real transistors, such as surface charges, contact resistances, impact ionization phenomena and extrinsic parasitic capacitances. The appearance of a velocity overshoot region near the drain, together with the presence of hot carriers in the channel, is observed in the saturation regime. The dynamic behaviour of the device is described through significant small signal equivalent circuit parameters, which are examined by means of internal quantities (such as profiles of the internal electron concentration), provided by numerical simulations. In general, the device shows excellent performance in terms of important design parameters, such as transconductance-to-current ratio, transconductance and cut-off frequency together with a reduced capacitive coupling to the substrate. The results of the Monte Carlo simulations show an exceptional agreement with the experimental data, thus confirming the validity of the simulator as a reliable tool for the analysis of the influence of geometrical and electrical parameters on the static and dynamic performance of the device.

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“…Thinfilm SOI MOSFETs offer indeed interesting low-voltage performances, higher speed and increased integration density, all with simpler processing than bulk silicon MOS-FETs of comparable size [5]. Many recent realizations of logic circuits, memories, and RF circuits [6] have confirmed both the advantages and the viability of thin-film SOI circuits, even in the case of very large systems. To support the development of thin-film SOI circuits, adequate device models and characterization techniques must be available concurrently with the maturation of fabrication processes.…”

Section: Introductionmentioning

confidence: 99%

Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs

Goffioul,

Vanhoenacker,

Raskin

2000

JTIT

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Original extraction techniques of microwave small-signal model and technological parameters for SOI MOSFETs are presented. The characterization method combines careful design of probing and calibration structures, rigorous in situ calibration and a powerful direct extraction method. The proposed characterization procedure is directly based on the physical meaning of each small-signal model element. Knowing the qualitative small-signal behavior of each model parameter versus bias conditions, the high frequency equivalent circuit can be simplified for extraction purposes. Biasing MOSFETs under depletion, strong inversion and saturation conditions, certain technological parameters and microwave small-signal elements can be extracted directly from the measured S-parameters. These new extraction techniques allow us to understand deeply the behavior of the sub-quarter micron SOI MOSFETs in microwave domain and to control their fabrication process

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Microwave Integrated CMOS Oscillators on Silicon-on-Insulator Substrate

Cited by 3 publications

References 11 publications

An improved multiline analysis for monolithic inductors

An improved multiline analysis for monolithic inductors

Numerical and experimental study of a 0.25 µm fully-depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behaviour

Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs

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