Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

Jaiswal, Piyush; Muazzam, Usman Ul; Pratiyush, Anamika Singh; Mohan, Nagaboopathy; Raghavan, Srinivasan; Muralidharan, R.; Shivashankar, S. A.; Nath, Digbijoy N.

doi:10.1063/1.5010683

Cited by 48 publications

(29 citation statements)

References 44 publications

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“…Apart from the above work, direct combination of Ga 2 O 3 with GaN can lead to sensitive solar‐blind DUVPDs as well . For instance, Jaiswal et al recently tried to deposit Ga 2 O 3 on GaN epilayers using the microwave radiation technique.…”

Section: Ga2o3mentioning

confidence: 99%

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

408

261

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Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga 2 O 3 , Mg x Zn 1−x O, III-nitride compounds (Al x Ga 1−x N/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.with energy much higher than the semiconductor bandgap. Moreover, due to light absorption by the surface passivation layers, typically Si oxide, quantum efficiency in the DUV range is greatly reduced. The passivation layers are also easily degraded by UV illumination. Finally, for highly sensitive UV photodetection, the detectors need to be cooled to reduce dark current; the cooled detectors, however, behave like cold traps for contaminants which degrade the detectivity.In the past two decades, the emergence of UV photodetectors based on wide-bandgap (WBG) semiconductors has opened up an avenue to circumvent the above-mentioned dilemma. The WBG semiconductors such as SiC, GaN, and some group II-V compounds, typically have bandgaps exceeding ≈3.10 eV, enabling room-temperature detectors to possess fast response speed, and offering intrinsic visible-blindness (response cutoff wavelength: ≈400 nm). [14][15][16] Moreover, these semiconductors generally possess significantly higher thermal conductivity than Si, which renders them suitable for operation in harsh environments (e.g., high temperature and high power). The electron velocity of these materials at large electric fields is generally higher than that of common semiconductors, although WBG semiconductors exhibit relatively lower electron and hole mobilities. Compared with the abovementioned conventional WBG semiconductors, ultrawide-bandgap (UWBG) semiconductors, as the next generation of semiconductor materials with bandgaps significantly wider than the 3.4 eV of GaN, are particularly suitable for solar-blind DUV light detection. [17][18][19][20]

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Section: Ga2o3mentioning

confidence: 99%

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

408

261

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“…Jaiswal et al. [ 200 ] have deposited Ga 2 O 3 on III‐nitrides (GaN/AlGaN) epilayers on a Silicon substrate and the subsequent detector showed a good spectral response with a low dark current of 12 nA at 20 V. Kokubun et al. [ 201 ] have fabricated an all oxide NiO/β‐Ga 2 O 3 (p–n), type II heterojunction with a built‐in voltage of 1.4 V. A developed photovoltaic action leads to a self‐powered behavior in graphene/β‐Ga 2 O 3 heterojunction based PD.…”

Section: Current Scenario In the Field Of Gallium Oxide Pds—materials Designmentioning

confidence: 99%

“…These defects tend to degrade the device performance and may even lead to a carrier pile-up. Jaiswal et al [200] have deposited Ga 2 O 3 on III-nitrides (GaN/ AlGaN) epilayers on a Silicon substrate and the subsequent detector showed a good spectral response with a low dark current of 12 nA at 20 V. Kokubun et al [201] have fabricated an all oxide NiO/β-Ga 2 O 3 (p-n), type II heterojunction with a built-in voltage of 1.4 V. A developed photovoltaic action leads to a selfpowered behavior in graphene/β-Ga 2 O 3 heterojunction based PD. [63] A strain-free interface between 2H-MoTe 2 and β-Ga 2 O 3 leads to a type I band alignment with an abnormal built-in potential.…”

Section: Pds Based On Heterojunctions Formed With Ga 2 Omentioning

confidence: 99%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

302

153

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With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill‐effects on humans. This requires detection systems with suitable spectral response to the “invisible to the naked eye” radiation leaks with utmost sensitivity and swiftness. State of the art deep‐UV photodetectors based on the wide bandgap material gallium oxide have achieved responsivities up to few hundred A W−1 while the minimum response time achieved is few hundred nanoseconds. However, due to the trade‐off between these two key parameters, the ultimate performance of the photodetectors remains inadequate. The focus here is to give a thorough review of the gallium oxide based photodetectors, their recent progress and future prospects. This review highlights the fundamental physics and the key parameters such as dark current, responsivity, and response time with their dependence on the material properties. Exploration of the reasons behind current scenario in the field of gallium oxide is comprehensively and critically analyzed. The key challenges which limit device performance and inhibit the realization of real‐world practical detectors are also described. The lacunae currently plaguing the field is also discussed with possible remedial solutions.

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“…Excellent solar-blind performance with high responsivity and low dark currents have been reported for β-Ga 2 O 3 deep-UV photodetectors. 6,[26][27][28][29][30][31][32] Both Schottky 14,17,27,30,[32][33][34] and metal-semiconductor-metal (MSM) 7,9,13,[19][20][21]35,36) type device architecture have been studied on bulk as well as epitaxial β-Ga 2 O 3 on foreign substrates. Battery-free, self-powered UV detectors reduce the weight and power supply requirement of imagers and prove to be beneficial in terms of reducing the footprint and complexity of systems.…”

mentioning

confidence: 99%

Demonstration of zero bias responsivity in MBE grown β-Ga₂O₃ lateral deep-UV photodetector

Pratiyush

Krishnamoorthy

Kumar

et al. 2018

Jpn. J. Appl. Phys.

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We demonstrate zero-bias spectral responsivity in MBE-grown β-Ga 2 O 3 planar UV-C detector with good linearity up to optical power density of 4.6 mW cm %2. Devices with asymmetrical metal contacts were realized on 150 nm thick β-Ga 2 O 3 films on sapphire. The device exhibited a spectral responsivity of 1.4 mA W %1 at 255 nm under zero-bias condition, dark current <10 nA at 15 V and UV-to-visible rejection ratio >10 5 at 5 V. The demonstrated UV-C detector exhibited an estimated high detectivity of 2.0 ' 10 12 Jones at 1 V and were found to be very stable and repeatable, suggesting its potential use for focal plane arrays.

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Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

Cited by 48 publications

References 44 publications

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Demonstration of zero bias responsivity in MBE grown β-Ga₂O₃ lateral deep-UV photodetector

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Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

Cited by 48 publications

References 44 publications

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

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Demonstration of zero bias responsivity in MBE grown β-Ga₂O₃ lateral deep-UV photodetector