1998
DOI: 10.1063/1.368166
|View full text |Cite
|
Sign up to set email alerts
|

Microwave losses in incipient ferroelectrics as functions of the temperature and the biasing field

Abstract: The dielectric constant of ferroelectric materials can be controlled by an applied electric field. That is promising for applications using the microwave technique. The widespread use of ferroelectric materials at microwaves is retarded by a considerable high dielectric loss by the materials at high frequencies. The goal of this article is to model the essential mechanisms of losses in incipient ferroelectrics at microwave frequencies. The following materials are studied: strontium titanate (SrTiO3) and potass… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

4
62
0

Year Published

2001
2001
2016
2016

Publication Types

Select...
6
2
2

Relationship

0
10

Authors

Journals

citations
Cited by 111 publications
(66 citation statements)
references
References 17 publications
4
62
0
Order By: Relevance
“…The KTaO 3 insert was assumed to have a relative dielectric constant r = 261 and loss tangent tan ␦ = 7.5ϫ 10 −4 at room temperature. 3,16,17 The dielectric length was varied over the range 1 mmϽ l d Ͻ 3 mm, giving an isolated natural resonance frequency of 9.4947 GHz at 1.75 mm. At this diameter, the isolated dielectric resonator efficiency parameter ⌳ d = 41.01 G / W 1/2 .…”
Section: Resultsmentioning
confidence: 99%
“…The KTaO 3 insert was assumed to have a relative dielectric constant r = 261 and loss tangent tan ␦ = 7.5ϫ 10 −4 at room temperature. 3,16,17 The dielectric length was varied over the range 1 mmϽ l d Ͻ 3 mm, giving an isolated natural resonance frequency of 9.4947 GHz at 1.75 mm. At this diameter, the isolated dielectric resonator efficiency parameter ⌳ d = 41.01 G / W 1/2 .…”
Section: Resultsmentioning
confidence: 99%
“…Similarly, studies of microwave dissipation and relaxation in magnetic or dielectric materials have received great attention recently, e.g., to resolve the coupling of spins and charges in magnetic superconductors like the borocarbides or rutheno-cuprates [6,7,8], or materials displaying colossal magneto-resistance [9], or to search for low-loss ferrite or ferroelectric materials for frequency-agile devices [10,11,12]. …”
Section: Theoretical Backgroundmentioning
confidence: 99%
“…Identification of the dominant loss mechanisms in thin films at microwave frequencies is often complicated due to contributions from electrodes, which may dominate the loss characteristics of devices at high frequencies [5,6]. Recently, several authors have proposed to use the bias field dependence of the dielectric loss as a method to distinguish between different loss mechanisms [7,8].…”
Section: Introductionmentioning
confidence: 99%