Microwave Measurement of the Velocity-Field Characteristic of <i>n</i>-Type InP

Glover, Gary H.

doi:10.1063/1.1654120

Cited by 39 publications

(2 citation statements)

References 9 publications

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“…Here, the validation process was performed by investigating how the average electron drift velocity at lattice temperature T = 300 K changes as a function of the driving electric field. In particular, in figure 2 the experimental data collected by Glover et al (triangles), Nielsen (diamonds) and Hayes (asterisks) [35][36][37] are compared with our numerical findings (green squared), obtained by averaging the ensemble means of the electron drift velocity over the total temporal length of the simulation, with the exclusion of a transient time of 50 ps. This interval, empirically estimated by observing the time evolution of the electron drift [20].…”

Section: Model Validationmentioning

confidence: 99%

Elucidating the electron transport in semiconductors via Monte Carlo simulations: an inquiry-driven learning path for engineering undergraduates

2015

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Within the context of higher education for science or engineering undergraduates, we present an inquiry-driven learning path aimed at developing a more meaningful conceptual understanding of the electron dynamics in semiconductors in the presence of applied electric fields. The electron transport in a nondegenerate n-type indium phosphide bulk semiconductor is modelled using a multivalley Monte Carlo approach. The main characteristics of the electron dynamics are explored under different values of the driving electric field, lattice temperature and impurity density. Simulation results are presented by following a question-driven path of exploration, starting from the validation of the model and moving up to reasoned inquiries about the observed characteristics of electron dynamics. Our inquiry-driven learning path, based on numerical simulations, represents a viable example of how to integrate a traditional lecture-based teaching approach with effective learning strategies, providing science or engineering undergraduates with practical opportunities to enhance their comprehension of the physics governing the electron dynamics in semiconductors. Finally, we present a general discussion about the advantages and disadvantages of using an inquiry-based teaching approach within a learning environment based on semiconductor simulations.

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Section: Model Validationmentioning

confidence: 99%

Elucidating the electron transport in semiconductors via Monte Carlo simulations: an inquiry-driven learning path for engineering undergraduates

2015

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“…The dependencies of drift velocity, averaged electron energy, and effective mass versus electric field in InP films were calculated by our Monte Carlo procedure, which are pretty similar as experimental results. [8][9][10][11] The drift velocity versus electric field is presented in Fig. 1͑b͒.…”

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Numerical simulations of space charge waves in InP films and microwave frequency conversion under negative differential conductivity

García-Barrientos

Palankovski

2011

Applied Physics Letters

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Numerical simulations of amplification and propagation of space charge waves in InP films is investigated theoretically. A microwave frequency conversion using the negative differential conductivity phenomenon is carried out when the harmonics of the input signal are generated. An increment in the amplification is observed in n-InP films at essentially higher frequencies f<70 GHz, when compared with n-GaAs films f<44 GHz. This work provides a way to achieve a frequency conversion and amplification of micrometer and millimeter waves.

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Sub-threshold velocity-field characteristics of InAs1-xPx alloys

Young

Fender

1977

Phys. Stat. Sol. (a)

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The velocity‐field characteristics of n‐type InAs1‐xPx alloys are determined up to the threshold electric field for current instabilities by pulsed current‐voltage measurements on undoped epitaxial layers grown on semi‐insulating InP substrates. For x > 0.3 the current instabilities are caused by avalanche multiplication, while for x > 0.3 they are produced by transferred electron effects. By equating the threshold energies for these two mechanisms at x = 0.3, the γL intervalley separation is estimated at 0.71 eV for InAs0.7P0.3. Adding arsenic to InP reduces the threshold electric field from 8.5 kV cm−1 in InP to 2.75 kV cm−1 in InAs0.7P0.3 without significantly altering the peak velocity which remained constant at ≈ 2.4 × 107 cm s−1. This variation of threshold field and peak velocity in the transferred electron regime is in reasonable agreement with recent theoretical predictions.

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Microwave Measurement of the Velocity-Field Characteristic of n-Type InP

Abstract: Measurements of the velocity-electric field characteristic of n-type InP at 9.5 and 35 GHz are reported. The results indicate a peak velocity of about 2.7×107 cm/sec and threshold field of 12 kV/cm. The measurements are in good agreement with a two-valley model of conduction.

Cited by 39 publications

References 9 publications

Elucidating the electron transport in semiconductors via Monte Carlo simulations: an inquiry-driven learning path for engineering undergraduates

Elucidating the electron transport in semiconductors via Monte Carlo simulations: an inquiry-driven learning path for engineering undergraduates

Numerical simulations of space charge waves in InP films and microwave frequency conversion under negative differential conductivity

Sub-threshold velocity-field characteristics of InAs1-xPx alloys

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