Microwave Noise Behaviour of Double Barrier Resonant Tunnelling Diodes

Abstract

A method to measure the noise properties of double bafrier resonant tunnelling (DBRT) diodes is described. The noise figure and noise measure of (nonoscillating) DBRT devices were measured over the full positive and negative bias voltage range, in the 1-1.6 GHz frequency band. Results show a clear bias dependence and almost frequency independence. The lowest noise measure observed on a 16 gm mesa DBRT diode biased in its active regions was 3, indicating that DBRT diodes are low noise devices.