Microwave noise characterisation of AlInAs/GaAsSb/InP DHBTs

Zeng, Yuping; Benedickter, H.; Wu, Bing-Ruey; Bolognesi, C.R.

doi:10.1049/el.2009.1646

Cited by 1 publication

(1 citation statement)

References 7 publications

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“…This is an improvement of at least 2.3 dB with respect to previously reported values for GaAsSbbased DHBTs [4], [5]. This unprecedented performance was enabled by the introduction of an InP/GaInP composite emitter which enables small-area devices to maintain usable gain and a good RF performance under low current operating conditions necessary to achieve low-noise figures [9], [10].…”

Section: Introductionmentioning

confidence: 62%

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

Zeng

Ostinelli

Lovblom

et al. 2010

IEEE Electron Device Lett.

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We report self-aligned 0.3-µm emitter InP/GaAsSb/ InP DHBTs featuring a common-emitter current gain of 46 and cutoff frequencies f T = 400 GHz and f MAX = 322 GHz for devices implemented with a 20-nm C-doped base and a 75-nm InP collector. Our DHBTs display attractive noise properties with a minimum noise figure NF min = 1.2 dB at 20 GHz, which is nearly independent of frequency over the 2-20-GHz measurement band. This represents an improvement of at least 2.3 dB with respect to previously published results for GaAsSb-based devices, due to process improvements that allow good RF characteristics to be maintained at the low current levels required for low noise operation. Analysis shows that the low-frequency NF min is limited by the relatively low current gain values typical of III-V HBTs. InP/GaAsSb DHBTs could be attractive low-noise devices for higher frequencies.Index Terms-Double heterojunction bipolar transistors (DHBTs), InP/GaAsSb, millimeter-wave transistors, minimum noise figure.

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