Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers

Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation

“…The measured data is for a 2 100 m GaN device [18]. The minimum noise figure increases with increasing drain current due to an increase in high field diffusion noise [19].…”

Processes and Device Technologies for AlGaN/GaN High Electron Mobility Transistors

“…For short gatelength devices, up to 9.1 W/mm and 23.7% PAE were obtained by Kumar (4). AlGaN/GaN HEMTs have also demonstrated excellent noise performance with passivated 250 nm gatelength devices yielding a minimum noise figure of 0.98 dB and an associated gain of 8.97 dB at 18 GHz (5).…”

Investigation of gate induced noise in E‐mode GaN MOS‐HEMT and its effect on noise parameters

“…GaN high electron mobility transistor (HEMT) is one of the potential candidates for monolithic microwave integrated circuit transceiver design due to its high power, high frequency, and low noise performances . Most of the developed AlGaN/GaN‐based HEMTs and metal‐oxide‐semiconductor HEMTs (MOS‐HEMTs) are depletion type due to unique material properties of GaN, which lead to spontaneous and piezoelectric polarizations for 2‐dimensional electron gas (2DEG) formation at the heterointerface .…”

“…GaN high electron mobility transistor (HEMT) is one of the potential candidates for monolithic microwave integrated circuit transceiver design due to its high power, high frequency, and low noise performances. [1][2][3] Most of the developed AlGaN/GaN-based HEMTs 4 and metal-oxide-semiconductor HEMTs (MOS-HEMTs) 5 are depletion type due to unique material properties of GaN, which lead to spontaneous and piezoelectric polarizations for 2-dimensional electron gas (2DEG) formation at the heterointerface. 4 Although depletion-mode HEMTs are applicable for microwave power amplifiers and low noise and radio frequency (RF) switching devices, enhancement-mode MOS-HEMT 6,7 has added advantages in simpler circuit design and low power consumption due to elimination of negative power supply, 6 which is best suitable for RF integrated circuit design.…”