Microwave noise characterization of two-port devices using an uncalibrated tuner

Benelbar, R.; Huyart, B.; Bosisio, R.G.

doi:10.1109/22.538965

Cited by 2 publications

(2 citation statements)

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“…For each tuner position (ij, O<i<=Pl, and O+=P2) and each frequency k, the accesses on DUT have to be corrected in order to obtain NFcorr&,k). For this correction, the S11, S22 and S21' parameters of input and output accesses have to be computed [6,9]. These parameters are determined thanks to three different reflection devices put as DUT.…”

Section: C+bbf +Dbsmentioning

confidence: 99%

“…On Bs). During HF noise calibration, U2 rotations on Smit which provide the same source admittance for differen P ( i j , k)C(iJ, k) (9), P(ij,k) being 8 pondering factor and positions, as DUT instability due to some source impedances and detected by Ids variations, are automatically eliminated and, the matrix system is consequently adapted (during measurements (Pl,P2) becomes (pl,p2) with pl<P1 and p2<P2). Consequently, with the 2 above checks, the matrix system is never singular.…”

Section: C+bbf +Dbsmentioning

confidence: 99%

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BiCMOS MOSFET high frequency features for radiofrequency (RF) applications. Hot carrier effects on dynamic and noise parameters, impact on RF design features

Gloria¹,

Perrotin²,

Gonella³

et al.

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)

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BiCMOS 0.35um MOSFET High Frequency (HF) features for Radiofrequency (RF) applications are presented: Ft, Fmax and HF Noise parameters (the minimum noise figure: NFmin, the noise equivalent resistance: Rn and the source optimum reflection coefficient: GammaOPT). The effects of Hot Carrier (HC) degradations have been studied on these features, the whole characterization being achieved on a full automated on wafer HF measurement station. A comparison with bipolar device characteristics is made. In conclusion, even for stress conditions with high level of HC degradation (20% degradation on Ids, 8% on Ft, 10% on Fmax and 50% on real part of GammaOPT), MOSFET remains attractive for RF design achievement and stability in term of Noise figure. 0-7803-5 135-5/99/$10.00 0 1999 IEEE

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Section: C+bbf +Dbsmentioning

confidence: 99%

Section: C+bbf +Dbsmentioning

confidence: 99%