Microwave permeability study for antiferromagnet thickness dependence on exchange bias field in NiFe/lrMn layers

Queste, S.; Dubourg, S.; Acher, O.; Soret, J. C.; Barholz, K.-U.; Mattheis, R.

doi:10.1016/j.jmmm.2004.08.017

Cited by 17 publications

(3 citation statements)

References 27 publications

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“…The Ni 80 Fe 20 /Ir 20 Mn 80 exchange-biased system has been chosen because it has extensively been studied in the last decades, basically due to its high H EB , high T C (872 K), T N (730 K) and T B (520 to 590 K) temperatures, low H C fields, thermal and structure stability, field sensitivity and corrosion resistance, which enhance its potential for application in magnetic sensors and spin valve heads [37][38][39][40][41][42]. Ta has been selected as seed layer because it reinforces the (111) crystalline orientation and favors the growth of films with low roughness values and high (low) H EB (H C ) fields [43][44][45]. The choices of moderate t Ir20Mn80 = 8 nm and thinner t Ni80Fe20 = 3 nm guarantee continuous layers and that t Ni80Fe20 is below the ultrathin limit [34][35][36].…”

Section: Introductionmentioning

confidence: 99%

Origin and properties of an unexpected exchange bias of Ta/Ni80Fe20/Ir20Mn80/Ta heterostructure in ultrathin limit: Impact of the oblique deposition and Ta/Ni80Fe20 alloying

et al. 2022

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Section: Introductionmentioning

confidence: 99%

Origin and properties of an unexpected exchange bias of Ta/Ni80Fe20/Ir20Mn80/Ta heterostructure in ultrathin limit: Impact of the oblique deposition and Ta/Ni80Fe20 alloying

et al. 2022

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“…In general, there are several ways to enhance in-plane uniaxial magnetic anisotropy (UMA) in ferromagnetic films, such as oblique deposition, [6][7][8] magnetic annealing, [9][10][11][12][13] and exchange bias. [14][15][16][17][18] Among these, oblique deposition is easy to handle and thus is widely used in practice to increase the ferromagnetic resonance frequency of ferromagnetic thin films. [19,20] Due to the self-shadowing effect, the oblique deposition of ferromagnetic thin films on flat rigid substrates can result in elongated grains perpendicular to the direction of the incident atomic flux.…”

Section: Introductionmentioning

confidence: 99%

Thickness-dependent magnetic anisotropy in obliquely deposited Fe(001)/Pd thin film bilayers probed by VNA-FMR*

Gul¹,

He²,

Li³

et al. 2019

Chinese Phys. B

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The thickness-dependent magnetic anisotropy of obliquely deposited Fe(001)/Pd thin films on Mg(001) is investigated by fitting the field-dependent resonant field curve using the Kittel equation. In this study, three Fe film samples with thicknesses of 50 monolayers (ML), 45 ML, and 32 ML deposited at 0°, 45°, and 55°, respectively, are used. The magnetic anisotropy constant obtained from ferromagnetic resonance (FMR) spectra exhibits a dominant fourfold magnetocrystalline anisotropy (MCA) at the normal deposition angle with larger Fe thickness. However, the in-plane uniaxial magnetic anisotropy (UMA) is induced by a higher oblique deposition angle and a smaller thickness. Its hard axis lies between the [100] and [010] directions. The FMR data-fitting analysis yields a precise measurement of smaller contributions to the magnetic anisotropy, such as in-plane UMA. Due to MCA, when the magnetic field is weaker than the saturated field, the magnetization direction does not always align with the external field. The squared frequency-dependent resonant field measurement gives an isotropic Landé g-factor of 2.07. Our results are consistent with previous experiments conducted on the magneto-optical Kerr effect (MOKE) and anisotropic magnetoresistance (AMR) systems. Thus, a vector network analyzer ferromagnetic resonance (VNA-FMR) test-method for finding UMA in obliquely deposited Fe(001)/Pd bilayer ferromagnetic thin films, and determining the magnetic anisotropy constants with respect to the film normal deposition, is proposed.

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“…Recently, the microwave permeability spectra of F/AF bilayers have been studied in order to know the dynamic response [1][2][3][4][5][6] or to apply for the microwave devices [7]. Most of these works focused on the variations of the ferromagnetic resonance frequency (f FMR ) with exchange bias field in terms of F [1] or AF [2][3][4][5] layer thickness. In addition to the f FMR behaviour, the loss performance, which is identified by the Gilbert damping constant (α G ), is also a very import parameter for applications of micromagnetic devices at microwave frequencies.…”

Section: Introductionmentioning

confidence: 99%

Annealing temperature dependence of microwave permeability in CoFe/MnIr bilayers

Kim

Rao

Kim

et al. 2007

Phys. Status Solidi (c)

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We measured microwave permeability in thermal annealed CoFe/MnIr bilayers. The ferromagnetic resonance frequency (f FMR ) and Gilbert damping constant (α G ) are analyzed using the Landau-Lifshitz-Gilbert equation. The f FMR increases with the exchange bias field, and it can be easily tuned over 10 GHz either by controlling the CoFe thickness or through modifications of unidirectional anisotropy by thermal annealing. The extracted α G is inversely proportional to the exchange bias field, and this behavior is caused by the suppression of the anisotropy field distribution due to an increase in the exchange bias field. Thus, low loss performance in microwave frequency range can be achieved in exchange biased CoFe/MnIr bilayers.

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Microwave permeability study for antiferromagnet thickness dependence on exchange bias field in NiFe/lrMn layers

Cited by 17 publications

References 27 publications

Origin and properties of an unexpected exchange bias of Ta/Ni80Fe20/Ir20Mn80/Ta heterostructure in ultrathin limit: Impact of the oblique deposition and Ta/Ni80Fe20 alloying

Origin and properties of an unexpected exchange bias of Ta/Ni80Fe20/Ir20Mn80/Ta heterostructure in ultrathin limit: Impact of the oblique deposition and Ta/Ni80Fe20 alloying

Thickness-dependent magnetic anisotropy in obliquely deposited Fe(001)/Pd thin film bilayers probed by VNA-FMR*

Annealing temperature dependence of microwave permeability in CoFe/MnIr bilayers

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