Microwave power thin film resistors for high frequency and high power load applications

Abstract

The authors report a power-dividing-based microwave power thin film resistor (MPTFR) that exhibits high operating frequency and high power load. The MPTFR is comprised of substrate, ground electrodes, two TaN resistive films, power dividing circuit and signal input port. The experimental results show that the voltage standing wave ratio of the MPTFR is lower than 1.6 in the band of 3.4–7.4 GHz and 8.2–9.8 GHz. The power load of the MPTFR is 200 W. The experimental data are in good agreement with the electromagnetic simulations.

A Micromachined Reconfigurable Attenuator

“…"T," "π," and mix "T" are the most frequently used topologies of the resistive network. To achieve high accuracy for on-chip systems in microwave application scenarios, several substrate and resistor materials have been studied such as TaN thin film on BeO, quartz (Jiang et al 2010;Cano et al 2010;Yeh et al 2016), as well as graphene flakes (Yasir et al 2017). As a widely utilized material in both CMOS and MEMS devices, polysilicon thin film resistor has also been intensively investigated in RF/microwave applications for its low cost, tunable resistivity, and little parasitic capacitance (Hiromi et al 2004), such as load resistors in static RAM (Ohzone et al 1985), structural layer in pressure sensor (Malhaire et al 2003), and high-Q resonator (Jing et al 2004).…”