Microwave properties of Sr0.5Ba0.5TiO3 thin-film interdigitated capacitors

Kirchoefer, Steven W.; Pond, J.M.; Carter, A. C.; Chang, Wontae; Agarwal, Kriti; Horwitz, J. S.; Chrisey, Douglas B.

doi:10.1002/(sici)1098-2760(19980620)18:3<168::aid-mop3>3.0.co;2-d

Cited by 68 publications

(21 citation statements)

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“…As the dc bias is increased, the dielectric constant and dielectric loss of the ferroelectric film is decreased generally, so the data points in S 11 was shorter and existed in the outer region. The data were fitted to a parallel resistor-capacitor (R − C) model to determine capacitance and dielectric quality factor Q of the IDC device [13]. The measured reflection coefficient of the device under test was converted into impedance parameters using the following equation.…”

Section: Resultsmentioning

confidence: 99%

MICROWAVE DIELECTRIC PROPERTIES FOR (Pb,La)(Zr,Ti)O₃ THIN FILMS ON MgO (001) SUBSTRATE GROWN BY CHEMICAL SOLUTION DEPOSITION

Moon¹,

Kwak²,

Kim³

et al. 2005

Integrated Ferroelectrics

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Polycrystalline (Pb,La)(Zr,Ti)O 3 (PLZT) films were deposited on MgO (001) single crystal substrates using chemical solution deposition method. Structural properties of PLZT films were investigated using X-ray diffractometer. The dielectric properties of PLZT films were investigated under the dc bias field of 0−40 V using interdigital capacitors (IDC) device fabricated by photolithography and etching process. The small signal dielectric properties of PLZT films were calculated by modified conformal mapping the reflection scattering coefficient data measured using an HP 8510C vector network analyzer in 1-20 GHz at room temperature. The IDC device based on polycrystalline PLZT film exhibited about 40% and 8 of capacitance tunability with dc bias variation of 40 V and dielectric quality factor with no dc bias, respectively.

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Section: Resultsmentioning

confidence: 99%

MICROWAVE DIELECTRIC PROPERTIES FOR (Pb,La)(Zr,Ti)O₃ THIN FILMS ON MgO (001) SUBSTRATE GROWN BY CHEMICAL SOLUTION DEPOSITION

Moon¹,

Kwak²,

Kim³

et al. 2005

Integrated Ferroelectrics

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“…These results indicate that the Pt groundplane leads to a much higher capacitance than devices which do not have a Pt bottom layer [6]. These earlier devices were of a similar size, with the BST layer deposited directly on to a single-crystal LaAlO 3 substrate.…”

Section: Resultsmentioning

confidence: 99%

“…Expensive, single-crystal substrates such as sapphire [5], MgO and LaAlO 3 [6] have often been used as substrates for the deposition of BST thin films. These substrates have low microwave losses, and provide a good lattice match to BST.…”

Section: Introductionmentioning

confidence: 99%

Low Cost Interdigital BST Varactors for Tunable Microwave Applications

Fardin

Ghorbani

Holland

2005

TENCON 2005 - 2005 IEEE Region 10 Conference

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Abstract-In this paper, a simple and inexpensive technique for the fabrication of barium strontium titanate (BST) varactors is presented. BST films were deposited using RF magnetron sputtering on platinum coated silicon substrates. The advantages of silicon include low cost and ease of integration with existing fabrication processes. The microstructural properties of the BST layer were examined with scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) techniques. Gold top layer electrodes were deposited using DC sputtering and patterned with a conventional photolithographic process. The S-parameters of the varactor were measured from 40 MHz to 20 GHz on a vector network analyser. From this data, the capacitance, tunability and Q-factor of the device were extracted. The BST-based varactors show potential for integration into electronically tunable microwave circuits.

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“…A pair of S 11 reflection scattering parameter data curves taken at 0 and 40 V dc bias over the frequency region 0.5-20 GHz is shown in resistor-capacitor (R-C) model to determine capacitance and dielectric quality factor Q [7].…”

Section: Resultsmentioning

confidence: 99%

Measurement of Microwave Dielectric Properties of (Sr,Ba)Nb₂O₆ Thin Films

Moon

Kwak

Kim

et al. 2004

Integrated Ferroelectrics

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001) oriented (Sr,Ba)Nb 2 O 6 (SBN) thin films were deposited on MgO (001) single crystal substrates by the pulsed laser deposition method. Structural properties of SBN films were investigated using X-ray diffractometer. The microwave dielectric properties of SBN films were examined by calculating the scattering parameter obtained using a HP 8510C vector network analyzer with the frequency range 0.5-20 GHz at room temperature under the dc bias field of 0-80 kV/cm for interdigital capacitors (IDT) and coplanar waveguide (CPW) device based on SBN/MgO layer structure. Thick metal electrode patterns were fabricated by dc sputtering deposition, photolithography and etching process. The IDT device based on (001) oriented SBN films exhibited about 40% capacitance tunability with an electric field change of 80 kV/cm at room temperature, and the dielectric quality factor was about 20 at 12 GHz with no dc bias.

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Microwave properties of Sr0.5Ba0.5TiO3 thin-film interdigitated capacitors

Cited by 68 publications

References 0 publications

MICROWAVE DIELECTRIC PROPERTIES FOR (Pb,La)(Zr,Ti)O₃ THIN FILMS ON MgO (001) SUBSTRATE GROWN BY CHEMICAL SOLUTION DEPOSITION

MICROWAVE DIELECTRIC PROPERTIES FOR (Pb,La)(Zr,Ti)O₃ THIN FILMS ON MgO (001) SUBSTRATE GROWN BY CHEMICAL SOLUTION DEPOSITION

Low Cost Interdigital BST Varactors for Tunable Microwave Applications

Measurement of Microwave Dielectric Properties of (Sr,Ba)Nb₂O₆ Thin Films

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Microwave properties of Sr0.5Ba0.5TiO3 thin-film interdigitated capacitors

Cited by 68 publications

References 0 publications

MICROWAVE DIELECTRIC PROPERTIES FOR (Pb,La)(Zr,Ti)O3 THIN FILMS ON MgO (001) SUBSTRATE GROWN BY CHEMICAL SOLUTION DEPOSITION

MICROWAVE DIELECTRIC PROPERTIES FOR (Pb,La)(Zr,Ti)O3 THIN FILMS ON MgO (001) SUBSTRATE GROWN BY CHEMICAL SOLUTION DEPOSITION

Low Cost Interdigital BST Varactors for Tunable Microwave Applications

Measurement of Microwave Dielectric Properties of (Sr,Ba)Nb2O6 Thin Films

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Product

Resources

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MICROWAVE DIELECTRIC PROPERTIES FOR (Pb,La)(Zr,Ti)O₃ THIN FILMS ON MgO (001) SUBSTRATE GROWN BY CHEMICAL SOLUTION DEPOSITION

MICROWAVE DIELECTRIC PROPERTIES FOR (Pb,La)(Zr,Ti)O₃ THIN FILMS ON MgO (001) SUBSTRATE GROWN BY CHEMICAL SOLUTION DEPOSITION

Measurement of Microwave Dielectric Properties of (Sr,Ba)Nb₂O₆ Thin Films