Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account

Radiation hardness of subterahertz radiation source after neutron exposure

“…The study [16] has obtained the values of intensity of harmonics of the frequency multiplier on SCSL in the frequency band of 0.4−6.5 THz; and the study [11] has presented the research of the radiation hardness of the diodes on GaAs/AlAs SCSL. Based on the powers of the harmonics of the SCSL frequency multiplier in the study [16], the obtained dependences of the power on the frequency for the GD, it is possible to evaluate the dependence of the power of the harmonics on the frequency of the subterahertz source (Fig.…”

“…Such a device is based on a source of the Gunn diode (GD) heterodyne and the semiconductor superlattice (SCSL) multiplier [9]. Currently, the studies are actively undertaken for ionising radiation hardness of the traditional bulk [10] and planar Gunn diode [11], as well as the diodes based on the GaAs/AlAs-superlattices [12]. This article examines the radiation hardness of the subterahertz source based on GD and SCSL.…”

Radiation hardness of subterahertz radiation source based on heterodyne on Gunn diode generator and superlattice multiplier

“…One of such radiation sources is a device, consisting of heterodyne on Gunn diode (GD) oscillator and multiplier on semiconductor superlattice (SCSL) [7]. Currently the resistance of the conventional volumetric [8] and planar GD [9], as well as diodes based on GaAs/AlAs superlattices [10], to ionizing types of radiation is actively studied; radiation resistance of subterahertz range source based on GD and SCSL is examined in this study.…”

Investigation of THz Frequency Shaped Anode Planar Gunn Diodes Operating in Delayed Mode

“…These structures offer significant advantages over vertical structures as they are more easily incorporated within Microwave Monolithic Integrated Circuits (MMIC's) also the natural frequency of these devices is controlled by the fabrication rather than the material epitaxial growth process. The development of the planar diode [4][5][6][7][8][9][10][11][12][13] has shown many of the expected advantages of these devices, however the RF power output has remained disappointing low. Therefore, in recent years, the critical challenge of planar Gunn devices has been to further improve the RF output power and the oscillation frequency into the sub-terahertz region [14].…”