Microwave solid-state power amplifiers - state-of-the-art and future trends

Kistchinsky, A.

doi:10.1109/crmico.2004.183080

Cited by 3 publications

(3 citation statements)

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“…A better versatility and lower fabrication costs are obtainable by reducing the size of the systems. All these three features are mainly affected by the last module of the transmitter, i.e., the RF power module [2], [3]. The latter, in fact, absorbs the major of the supplied energy, it is the main responsible of nonlinearities, which limit the exploitation of the spectrum, and it requires a large chip area for delivering high RF power.…”

Section: Introductionmentioning

confidence: 99%

An efficient, linear and compact GaN-MMIC power module for microwave backhaul links

Piazzon

Giofrè

Colantonio

et al. 2014

2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)

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A GaN-MMIC power module for microwave back-haul applications in C-band frequency range is presented in this contribution. The design is based on a commercial 0.25 μm channel length GaN power process. The module is composed of two stages. The final stage is designed in order to reach 38 dBm of saturated output power with high efficiency and AM/AM linearity. The driver stage is integrated in order to achieve 25 dB of gain and to partially compensate the phase distortion generated by the final stage. The size of the passive matching networks is minimized, allowing to implement the overall circuit in a 3×3mm2 chip area. An uneven drain bias voltage for the two stages is adopted in order to maximize the total efficiency. The module shows 38 dBm of saturated output power, 25 dB of gain, 55% of power added efficiency and less than 1.5 degree of phase distortion at 7 GHz

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Section: Introductionmentioning

confidence: 99%

An efficient, linear and compact GaN-MMIC power module for microwave backhaul links

Piazzon

Giofrè

Colantonio

et al. 2014

2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)

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“…In backhaul, instead, center frequencies and bandwidths are higher [7], while the power levels are limited to 10–15 W in the lower bands, and further reduce at higher frequencies. The backhaul market is currently dominated by GaAs monolithic microwave integrated circuits (MMIC) combined class-AB PA (AB-PA), while it is still an open question if the adoption of more costly technologies, like GaN [8, 9], and/or more complex architectures, like the DPA, are justified by the expected efficiency increase [10, 11]. As a matter of fact, the clear advantages theoretically given by these solutions are reduced by the need of more complex (and possibly more energy eager) linearization schemes.…”

Section: Introductionmentioning

confidence: 99%

A comprehensive comparison between GaN MMIC Doherty and combined class-AB power amplifiers for microwave radio links

Giofrè

Colantonio

Giannini

et al. 2016

Int. J. Microw. Wireless Technol.

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A combined class-AB and a Doherty power amplifier conceived for microwave backhaul in the 7 GHz frequency band are here presented and compared. They are fabricated in the same GaN monolithic process and have identical total active device periphery. For the given application, the linearity-efficiency trade-off for the two architectures is discussed. The two modules have been thoroughly characterized in linear and non-linear continuous wave conditions. Then, to evaluate linearity under the actual operative conditions, a system level characterization has been carried out, applying a modulated input signal and comparing the spectral responses of the two amplifiers with and without digital predistortion. A saturated output power of 40 dBm has been achieved by both circuits. At 6 dB of output back-off, the Doherty amplifier shows an efficiency of 33%, 10 points higher than that of the class-AB module. On the other hand, system level measurements show that, adopting the same predistorter complexity to comply with the reference standard emission masks, the Doherty amplifier needs at least 1 dB of extra back-off. This negatively affects its efficiency, therefore reducing the advantages it can claim with respect to the class-AB amplifier in continuous wave condition

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“…Although Ku band high power amplifiers have already been developed with GaAs based FETs (Zhong et al, 2006;Darbandi et al, 2002;Ishimaru et al, 1999), remarkable improvements in size and weight of amplifiers are considered to be possible with GaN based high electron mobility transistors (HEMTs). For example, the package size of amplifier can be reduced due to their high power density (Boles et al, 2010;Kistchinsky, 2009), and the size and weight of cooling unit can be also reduced, as GaN epitaxial layers can be grown on SiC substrate, which is a better thermal conductor than GaAs. These are great advantages especially for satellite communication systems, due to stability at high temperature.…”

Section: Introductionmentioning

confidence: 99%

Ku‐band high power internally matched GaN HEMTs with 1.5 GHz bandwidth

Qin

Liu

Chen

et al. 2013

Microelectronics International

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Purpose -The purpose of this paper is to report upon high power, internally matched GaN high electron mobility transistors (HEMTs) at Ku band with 1.5 GHz bandwidth, which employ a simple and cost-effective lossless compensated matching technique. Design/methodology/approach -Two 4 mm gate periphery GaN HEMTs are parallel combined and internally matched with multi-section reactive impedance transformers at the input and output networks. The output matching network is designed at the upper frequency of the design band for a flat power of the circuit, while the input matching network is designed at the upper frequency for a flat gain. Findings -With the reactively compensated matching technique, the internally matched GaN HEMTs exhibit a flat saturated output power of 43.2 þ 0.7 dBm and an average power added efficiency of 15 per cent over 12 to 13.5 GHz. Originality/value -This paper provides useful information for the internally matched GaN HEMTs.

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Microwave solid-state power amplifiers - state-of-the-art and future trends

Cited by 3 publications

References 0 publications

An efficient, linear and compact GaN-MMIC power module for microwave backhaul links

An efficient, linear and compact GaN-MMIC power module for microwave backhaul links

A comprehensive comparison between GaN MMIC Doherty and combined class-AB power amplifiers for microwave radio links

Ku‐band high power internally matched GaN HEMTs with 1.5 GHz bandwidth

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