Microwave tunable straight edge resonator on silicon membrane

Sajin, G.; Matei, Elena; Marcelli, R.

doi:10.1109/euma.2000.338673

Cited by 9 publications

(4 citation statements)

References 5 publications

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“…From Fig.3 (a) and (b) it can be seen that the YIG dimensions are not critical for the band -stop configuration response. This is different from the case of the band-pass resonator (see [10], [11]). …”

Section: Resultsmentioning

confidence: 80%

“…To obtain a band-stop resonator configuration, the MSW SER was top coupled with respect to a microstrip line. The same technological steps described in [9], [10], [11] have been followed to obtain a suitable 50 µm micromachined membrane in a 380 µm thick silicon substrate. A high impedance (narrow width) line was used in the coupling region for providing an increased bandwidth of the resonator configuration.…”

Section: Methodsmentioning

confidence: 99%

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Band-stop magnetostatic wave resonators

et al. 2003

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Two band-stop SERs (resonator A and resonator B) on silicon membrane were obtained and characterized. The frequency tunability domain of these resonators was between 3 GHz and 9.5 GHz ca. obtained by changing the dc magnetic bias field between H appl = 0.02 T and H appl = 0.34 T. The measurements of the S 21 parameter demonstrate a suppression of more than 20 dB of the high order modes, showing a good selectivity of this kind of resonator. The rejection ratio was better than -20 dB in the frequency domain from f = 3 GHz to f = 9.5 GHz for the resonator A and better than -20 dB between f = 4.2 GHz and f = 9.5 GHz for the resonator B. These results demonstrate the possibility to obtain microwave band-stop resonators supported on silicon membrane with high isolation and rejection ratios.

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Section: Resultsmentioning

confidence: 80%

Section: Methodsmentioning

confidence: 99%

Band-stop magnetostatic wave resonators

et al. 2003

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“…MSW straight edge resonators (SER) made by a thin yttrium-iron garnet (YIG) layer grown on a gallium-gadolinium garnet (GGG) substrate are used as frequency selective elements for oscillators [3]. Following previous encouraging results on SER-based micromachined structures [4][5][6] a new configuration has been characterized to extend the frequency domain operation between 10 GHz and 20 GHz, thus obtaining a simple and viable alternative to the YIG sphere tunable resonators.…”

Section: Introductionmentioning

confidence: 99%

Double YIG Band - Stop Resonators on Silicon Membrane

Sajin

Marcelli

Cismaru

et al. 2003

33rd European Microwave Conference, 2003

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In this paper is presented a microwave tunable band-stop configuration based on the combination of two cascaded magnetostatic wave resonators, working at frequencies greater than 10 GHz. The structure has been obtained by coupling YIG film straight edge resonators (SER) excited by magnetostatic waves (MSW), coupled to a microstrip line on a micromachined silicon membrane. Measurements performed at different DC biasing magnetic fields demonstrate a tunability between 10 GHz and 17 GHz. The attenuation ranges between 20 and 25 dB at the central frequency domain (11 -12 GHz and 13 -16 GHz) and between 34 and 40 dB at the limits of the frequency domain (10 -11 GHz ... 16 -17 GHz).

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“…Cr/Au followed by Au electroplating was used for the microstrip transducers, up to a 1.5 µm of thickness [5]. For device construction see, also, Fig.1 [6].…”

Section: Device Constructionmentioning

confidence: 99%