Microwave ZnO Thin-Film Transistors

Bayraktaroglu, B.; Leedy, Kevin D.; Neidhard, R.

doi:10.1109/led.2008.2001635

Cited by 86 publications

(51 citation statements)

References 17 publications

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“…However, so far, mobility in precursor-route ZnO still falls short of the performance of ZnO when deposited by methods such as magnetron sputtering or pulsed laser deposition [8][9][10][11].…”

Section: Physical Chemistry Chemical Physics Accepted Manuscriptmentioning

confidence: 99%

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

Althagafi

Algarni

Naim

et al. 2015

Phys. Chem. Chem. Phys.

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eprints@whiterose.ac.uk https://eprints.whiterose.ac.uk/ Reuse Unless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. This is an Accepted Manuscript, which has been through the Royal Society of Chemistry peer review process and has been accepted for publication.Accepted Manuscripts are published online shortly after acceptance, before technical editing, formatting and proof reading. Using this free service, authors can make their results available to the community, in citable form, before we publish the edited article. We will replace this Accepted Manuscript with the edited and formatted Advance Article as soon as it is available. AbstractWe significantly improved the performance of precursor-route semiconducting zinc oxide (ZnO) films in electrolyte-gated thin film transistors (TFTs). We find that the organic precursor to ZnO, Zinc Acetate (ZnAc), dissolves more readily in a 1:1 mix of ethanol (EtOH) and acetone than in either pure EtOH, pure acetone, or pure isopropanol. XPS and SEM characterisation show improved morphology of ZnO films converted from mixed solvent cast ZnAc precursor compared to EtOH cast precursor. When gated with a biocompatible electrolyte, phosphate buffered saline (PBS), ZnO thin film transistors (TFTs) derived from mixed solvent cast ZnAc give 4 times larger field effect current than similar films derived from ZnAc cast from pure EtOH. Sheet resistance at V G = V D = 1V is 30 kΩ/!, lower than for any organic TFT, and lower than for any electrolyte-gated ZnO TFT reported to date.

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Section: Physical Chemistry Chemical Physics Accepted Manuscriptmentioning

confidence: 99%

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

Althagafi

Algarni

Naim

et al. 2015

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

“…With a wide direct bandgap of ~3.4eV at room temperature, ZnO has been regarded as an excellent semiconductor material for UV detection and possesses an absorption profile that compliments many organic semiconductors. ZnO can be easily deposited at room-or relatively low temperatures to form thin layers by standard techniques such as sputtering [6], atomic-layer deposition [7] and pulsed-laser deposition [8]. The electron mobility is generally limited by surface roughness and carrier scatterings at grain boundaries; however, the electron mobility in ZnO has been demonstrated to reach up to 110cm 2 /Vs, when using an elevated substrate temperature during the growth step [9].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers

Kettle

Chang

Horie

2015

Microelectronic Engineering

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We report the fabrication and characterisation of an organic-inorganic hybrid Photodiode (HPD) based on PCPDTBT and Zinc Oxide (ZnO) photoactive layers. The main benefit of using these materials is that multi spectral light sensing from the UV through to the Near Infrared is achieved, encompassing wavelengths ~350nm-870nm. To our knowledge, this is one of the widest range responses reported for an inorganic-organic hybrid photodiode. The evaluation of the technology shows the devices exhibit one of the lowest levels of dark currents reported for a HPD, but some limitations exist due to a low on-off ratio and non-linearity of the responsivity at low incident power.The stability of devices made with PCPDTBT:ZnO active layers is compared to more commonly reported P3HT:ZnO devices in dark and it is shown that using PCPDTBT substantially improves lifetime. Highlights-Wide photoresponse from UV to the NIR is achieved -Device exhibits low dark current and high rectification ratio for a hybrid device -Responsivity is measured and shown to be linear for incident power> 0.04W/cm 2 -Improved lifetime observed with PCPDTBT active layer, when compared to P3HT-based devices

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“…In addition to transparency in visible range, they have superior electron mobility and better stability than a-Si:H TFTs [4][5][6][7], which has been the dominant device for flex electronics and flex displays [8]. Higher mobility directly translates into faster performance showing promise for even RFID tags [9]. Several AOS like Indium zinc oxide (IZO) [4], Indium Gallium Zinc Oxide [10] and Zinc Tin Oxide [11] have been reported and studied.…”

Section: Introductionmentioning

confidence: 99%

Impact of drain bias stress on forward/reverse mode operation of amorphous ZIO TFTs

Dey¹,

Allee²,

Clark³

2011

Solid-State Electronics

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Microwave ZnO Thin-Film Transistors

Cited by 86 publications

References 17 publications

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers

Impact of drain bias stress on forward/reverse mode operation of amorphous ZIO TFTs

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