Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal—organic chemical vapor deposition

Abstract

Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition *Xing Hai-Ying(邢海英) a)b) , Xu Zhang-Cheng(徐章程) a) † , Cui Ming-Qi(崔明启) b) , Xie Yu-Xin(谢玉芯) a) , and Zhang Guo-Yi(张国义) c)

Role of vacancy-type defects in magnetism of GaMnN

“…Our previous work [14] and Obloh et al [29] found that V N was likely to form under the higher growth temperature condition of MOCVD, and that our work identified it as V N -Mn Ga complex. [14] Moreover, our photoluminescence experiment [17] found that the intensity of yellow band (YL) bands decreased with the increase of Mn concentration in the sample, which was attributed to V Ga . [30,31] This result indicates that the V Ga concentration will decrease with the increase of Mn concentration in the sample.…”

“…Our previous experiment also found that the Mn 3+ (d 4 ) and Mn 2+ (d 5 ) coexisted in the sample. [17]…”

“…[2][3][4][5][6][7][8][9] Moreover, although Mn is known as forming deep acceptor levels located in the band gap of GaN, the electronic structure and valence states of Mn ions are still controversial, [10][11][12][13] and the origin of experimentally observed ferromagnetism is still not fully understood. In our previous experimental studies, [9,[14][15][16][17] we observed the presence of N vacancy (V N ) with the Mn concentration increasing and analyzed the coexistence of Mn 3+ and Mn 2+ in a GaMnN sample. The understanding of magnetism of GaMnN requires more knowledge of vacancy-type defects and their interactions with the Mn ions.…”