Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications

Rothmayr, Florian; Pfenning, Andreas; Kistner, C.; Koeth, Johannes; Knebl, Georg; Schade, Anne; Krueger, S.; Worschech, L.; Hartmann, Fabian; Höfling, Sven

doi:10.1063/1.5025531

Cited by 26 publications

(20 citation statements)

References 33 publications

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“…After exceeding the local maximum, the absolute value of I Ph continuously decreases and approaches zero. The measured I ( V ) characteristics is distinctive for RTD photodetectors with a lower‐bandgap energy absorption layer and for the modulation of a (resonant tunneling) current via Coulomb interaction …”

Section: Resultsmentioning

confidence: 99%

p‐Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid‐Infrared Spectral Region

Pfenning

Hartmann

Weih

et al. 2018

Advanced Optical Materials

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In a recent publication, we proposed to apply the resonant tunneling diode (RTD) photodetector principle to the mid-infrared (MIR) spectral region, by combining an antimony-based AlSb/ GaSb double barrier quantum well (DBQW) resonant tunneling structure (RTS) with an narrow bandgap absorption region. [17] Hereby, the RTD serves as an internal high-gain amplifier of small optically generated electrical signals. In contrast to, e.g., avalanche photodiodes where the gain is provided via impact ionization processes, the gain of RTD photodetectors originates from the modulation of a larger majority charge carrier tunneling current that is sensitive to small variations of the local electrostatic potential.The so called 6.1 Å family, [18] which is comprised of the three semiconductors InAs, GaSb, and AlSb offers a huge flexibility in designing electronic, optical, and optoelectronic devices, [19] such as topological insulators, [20][21][22][23] optical MIR type-II superlattice photodetectors, [24] and quantum cascade lasers (QCLs), [25][26][27] or interband cascade lasers (ICLs), [27][28][29][30][31] and interband cascade detectors (ICDs). [32,33] This flexibility can mainly be attributed to the huge variety of band lineups, bandgap energies, and in particular to the so called InAs/GaSb type-II broken bandgap alignment. While the InAs/GaSb/AlSb material system has also brought forth a large variety of different resonant tunneling structures, [3,18,34,35] only AlAsSb/GaSb RTDs provide the required energy barriers in both valence and conduction band due to the type-I heterointerface. [36][37][38][39] In another recent publication, we demonstrated that room temperature resonant tunneling of electrons in AlAsSb/GaSb RTDs requires the use of emitter prewells. [40][41][42] Here, we propose to invert the charge carrier polarity within the RTD photodetector, i.e., using p-type instead of n-type doping.Using p-type doping in an RTD photodetector, and therefore hole instead of electron transport, might seem counterintuitive at first, since hole transport usually comes with several disadvantages. Due to their higher effective mass, holes have a lower mobility and a smaller de Broglie wavelength compared to electrons. [43] A lower mobility results in inferior transport properties, a smaller de Broglie wavelength demands a higher quality semiconductor crystal growth. However, and in particular for the GaSb material system, p-type doping may Mid-infrared (MIR) resonant tunneling diode (RTD) photodetectors based on a p-type doped AlAsSb/GaSb double-barrier quantum well (DBQW) are proposed and investigated for their optoelectronic transport properties. At room temperature, a distinct resonant tunneling current with a region of negative differential conductance is measured. The peak-to-valley current ratio (PVCR) is 1.51. To provide photosensitivity within the MIR spectral region, a lattice-matched quaternary low-bandgap GaInAsSb absorption layer with cutoff wavelength of λ = 2.77 μm is integrated near the DBQW. Under illumination with ...

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Section: Resultsmentioning

confidence: 99%

p‐Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid‐Infrared Spectral Region

Pfenning

Hartmann

Weih

et al. 2018

Advanced Optical Materials

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“…RTD devices can be designed to utilise photoconductivity to produce highly sensitive photodetectors [63] in the visible and near infrared. Recently the concept has been extended to include the mid-infrared [64]. We give a simple analysis on how a double barrier RT structure can be used to amplify the current in a photoconducting device.…”

Section: Photoconductivity and Photodetectionmentioning

confidence: 99%

“…Due to its built-in wide bandwidth electrical gain they are being considered as potential candidates to function as high-speed optical-to-electrical transducers for future light-wave and radio-over-fiber communication systems, and as single-photon detectors for quantum-based technologies. There has been world-wide research effort in exploring the potential of RTD-PDs [64], [88,89], [90,91] and more generally the potential of photodetectors that utilize negative differential conductance (NDC).…”

Section: Introductionmentioning

confidence: 99%

Resonant Tunneling Diode Photonics

Ironside

Romeira

Figueiredo

2019

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Optical communication systems relying on microwave/millimetre-wave-optical transducers are fundamental to the development of applications such as low-cost fibre-optic communication networks, radio-over-fibre wireless communications, and radio phased array antennas. Those systems require the use of very fast optical modulators[72] since laser diodes cannot be directly modulated at frequencies beyond their resonance frequency which is typical below few tens of gigahertz [73]. In this chapter we cover our work on low driving voltage highspeed and highly efficient electrical active electro-absorption modulators (EAMs). The EAM is based on the integration of a double barrier quantum well (DBQW) structure within AlGaAs/GaAs and InGaAlAs/InGaAs unipolar semiconductor optical waveguides and operates at the optical windows corresponding to wavelengths around 900 nm, 1300 and 1550 nm. This novel device is known as resonant tunnelling diode electro-absorption modulator (RTD-EAM).

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“…In this work, we present a comprehensive investigation of the energy band structure of the type-II RTS with an adjacent quaternary bulk layer. Similar material combination utilizing type-I GaAsSb/AlAsSb quantum wells (QW) with a GaInAsSb absorption layer was recently successfully reported as a photodetector operating in the mid-infrared spectral range [16,17]. Due to the complicated band alignment of such systems in the vicinity of RTS's, as well as the possibility of interface layer formation, the structure under investigation exhibits non trivial photoluminescence (PL) behavior.…”

Section: Introductionmentioning

confidence: 99%

Fourier-Transformed Temperature-Dependent Photoluminescence of GaSb-Based Resonant Tunneling Structure with GaInAsSb Absorption Layer

et al. 2018

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The band structure of type-II resonant tunneling structures with a quaternary GaInAsSb absorption layer was studied by means of Fourier-transformed photoluminescence in the mid-infrared spectral region. The temperatureresolved measurement revealed a low-energy band with non-trivial photoluminescence spectra evolution. At low temperature the emission originating from the confined states within the type II GaSb/AlSb/InAs quantum well dominates the spectrum. The increase of temperature triggers the hole transfer from the GaSb quantum wells to the heavy hole band edge of the quaternary GaInAsSb material. The GaInAsSb-related emission line arises at 130 K and gains in intensity up to room temperature.

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Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications

Abstract: We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additional quaternary Ga0.64In0.36As0.

Cited by 26 publications

References 33 publications

p‐Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid‐Infrared Spectral Region

p‐Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid‐Infrared Spectral Region

Resonant Tunneling Diode Photonics

Fourier-Transformed Temperature-Dependent Photoluminescence of GaSb-Based Resonant Tunneling Structure with GaInAsSb Absorption Layer

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