Mid-infrared GaSb-InAs-based multiple quantum well lasers

GaSb-based mid-infrared 2–5 μm laser diodes

“…Consequently, holes are confined in a nearly triangular potential close to the QW interfaces, and their presence probability near the quantum well is strongly increased so that the electron-hole wavefunction overlap becomes important. In these conditions, the reported good performance from type-II GaInAsSb/GaSb QW lasers are not surprising [19,22,[63][64][65][66][67].…”

“…Besides, the possibility of growing strained layers by MBE offers matter for imagining and fabricating complex but high-performing laser structures. In 2000, four III-V laser technologies have emerged in this way for laser emission in the mid-infrared: (i) interband lasers including in their active zone GaInAsSb/AlGaAsSb type-I or GaInAsSb/GaSb type-II quantum wells (QWs) [15][16][17][18][19][20][21][22]; (ii) type-III 'W' lasers based on the InAs/GaInSb system [23][24][25][26]; (iii) quantum cascade lasers (QCLs) which employ conduction intersubband radiative transitions in the GaInAs/AlInAs system [27][28][29][30][31][32][33]; and (iv) interband quantum cascade lasers (ICLs) which associate interband transitions and cascade effect in the type-III InAs/GaInSb system [34][35][36]. Excellent performance was obtained in pulsed regime at room temperature or near room temperature from these different technologies.…”

Temperature dependence of the energy gap and spin-orbit splitting in a narrow-gap InGaAsSb solid solution

“…The threshold current in the interband lasers operating at the 2-5 wavelengths is very strongly temperature dependent (typically the characteristic temperature T 0 is only 20-30 K) and rises to unacceptably high values when room temperature is approached. 5 Type II heterostructures employing multinary InGaAsSb compound systems have been proposed as an alternative, 6 where Auger processes are minimized by removing the resonance between energy gap and split-off gap due to a spatial separation of electrons and holes at the type II heterointerface. 7 In the type-II (Ga,In)(As,Sb)/InAs structures, the radiative recombination transitions occur between electrons and holes localized on the separate sides of the heterointerface.…”

High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers

“…The internal quantum efficiency determined from these data is as high as 89%. The internal losses were reduced to 7.8 cm −1 comparing with our previous works [7,8] owing to the smaller penetration of the light wave into heavily doped cladding layers because of the increased thickness of the waveguide.…”

“…Besides, with a proper design of the type-II active zone non-radiative Auger processes can be significantly suppressed, which is very important for mid-infrared diode lasers [5]. Low threshold type-II GaInSbAs/GaSb QW lasers emitting between 2 and 2.65 µm at RT have been reported [6][7][8]. The threshold current density of these lasers is comparable with that of the type-I structures but their internal quantum efficiency did not exceed 47% and the cw optical power of only 2 mW has been achieved at RT.…”