Mid-infrared photonic crystal waveguides in silicon

Reimer, Christian; Nedeljkovic, Milos; Stothard, David J. M.; Esnault, Matthieu O. S.; Reardon, Christopher; O’Faoláin, Liam; Dunn, Malcolm H.; Mashanovich, Goran Z.; Krauss, Thomas F.

doi:10.1364/oe.20.029361

Cited by 57 publications

(31 citation statements)

References 20 publications

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“…Silicon-on-insulator [5,8,[40][41][42][43] 4.3 0.2 (3.8 μm) [9] Silicon-on-insulator (multi-mode) [9] 6.7 Silicon-on-porous silicon [5] 6.7 3.9 (3.39 μm) [ [38] 4.3 20 (10.6 μm) [38] a…”

Section: Siliconmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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“…Silicon-on-insulator [5,8,[40][41][42][43] 4.3 0.2 (3.8 μm) [9] Silicon-on-insulator (multi-mode) [9] 6.7 Silicon-on-porous silicon [5] 6.7 3.9 (3.39 μm) [ [38] 4.3 20 (10.6 μm) [38] a…”

Section: Siliconmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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“…The details of the measurement setup are discussed in [9], to which only two changes were made. Firstly, the source now consists of a tunable quantum cascade laser (tuning range: 3725 nm -3895nm) from Daylight Solutions which was used also in [10,11] and secondly instead of butt coupling to the waveguide structures vertical coupling is used. The designs and corresponding measurements are discussed in the following sub-sections.…”

Section: Spectrometer Design and Measurementsmentioning

confidence: 99%

Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 38μm

Muneeb¹,

Chen²,

Verheyen³

et al. 2013

Opt. Express

122

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Abstract:The design and characterization of silicon-on-insulator midinfrared spectrometers operating at 3.8μm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

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“…Towards mid-IR applications, different types of Group IV waveguides have been reported recently, based on silicon-on-insulator (SOI) [191][192][193], silicon-on-sapphire [142,194,195], silicon-on-porous-silicon [192], siliconon-nitride [196,197], suspended membrane silicon [198], silicon pedestal [199], and germanium-on-silicon [200]. Most of the waveguides are not aimed specifically at nonlinear applications, and little attention has been paid to dispersion engineering [196].…”

Section: Devicesmentioning

confidence: 99%

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

et al. 2014

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Group IV photonics hold great potential for nonlinear applications in the near-and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octavespanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

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Mid-infrared photonic crystal waveguides in silicon

Cited by 57 publications

References 20 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 38μm

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

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