Mid-infrared photonic gas sensing using a silicon waveguide and an integrated emitter

Consani, Cristina; Ranacher, Christian; Tortschanoff, A.; Grille, Thomas; Irsigler, Peter; Jakoby, Bernhard

doi:10.1016/j.snb.2018.07.096

Cited by 32 publications

(22 citation statements)

References 18 publications

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“…The silver surface acts as reflective mirror and source of radiation and absorption [22,23]. In the scenario of thermal emission, the source of thermal energy can be provided by an integrated heater next to the Ag, such as implemented in [14], or by direct Joule heating of Ag, for example. Our design includes a 140 nm thick SiN membrane, which enables straightforward integration of arbitrary, CMOS-compatible heater designs.…”

Section: Design Methods and Theory Of Stp Resonatorsmentioning

confidence: 99%

“…Also, expensive quantum-well materials in the dielectric region of the field enhancement (such as in [6]) are not needed in the field of thermal mid-IR emission. The near/mid IR spectral region is particularly interesting for absorption gas sensing and constitutes a huge field with great potential for novel highly-integrated devices [14,15].…”

Section: Introductionmentioning

confidence: 99%

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Highly Selective CMOS-Compatible Mid-Infrared Thermal Emitter/Detector Slab Design Using Optical Tamm-States

Pühringer¹,

Jakoby²

2019

Materials

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In this work, we propose and evaluate a concept for a selective thermal emitter based on Tamm plasmons suitable for monolithic on-chip integration and fabrication by conventional complementary metal oxide semiconductor (CMOS)-compatible processes. The original design of Tamm plasmon structures features a purely one-dimensional array of layers including a Bragg mirror and a metal. The resonant field enhancement next to the metal interface corresponding to optical Tamm states leads to resonant emission at the target wavelength, which depends on the lateral dimensions of the bandgap structure. We demonstrate the application of this concept to a silicon slab structure instead of deploying extended one dimensional layers thus enabling coupling into slab waveguides. Here we focus on the mid-infrared region for absorption sensing applications, particularly on the CO2 absorption line at 4.26 µm as an example. The proposed genetic-algorithm optimization process utilizing the finite-element method and the transfer-matrix method reveals resonant absorption in case of incident modes guided by the slab and, by Kirchhoff’s law, corresponds to emittance up to 90% depending on different choices of the silicon slab height when the structure is used as a thermal emitter. Although we focus on the application as an emitter in the present work, the structure can also be operated as an absorber providing adjusted lateral dimensions and/or exchanged materials (e.g., a different choice for metal).

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Section: Design Methods and Theory Of Stp Resonatorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Highly Selective CMOS-Compatible Mid-Infrared Thermal Emitter/Detector Slab Design Using Optical Tamm-States

Pühringer¹,

Jakoby²

2019

Materials

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“…j Paper-based microfluidics (Reproduced with permission from [161]. k Integrated thermal emitter as light source (Reproduced with permission from [163]). l Chalcogenide waveguide sensor integrated with PbTe photodetector (Reproduced with permission from [164])…”

Section: Sensor Configurations and System Integrationmentioning

confidence: 99%

“…Although III-V materials are promising to fulfill this goal through waferbonding, the requirement of thick high-quality III-V thin film for MIR applications is a challenge. In 2018, a thermal emitter as a MIR light source was successfully integrated with a Si waveguide [163]. Figure 7k shows that the MIR light generated by the blackbody radiation can be coupled to the waveguide.…”

Section: Sensor Configurations and System Integrationmentioning

confidence: 99%

Progress of infrared guided-wave nanophotonic sensors and devices

Dong

Lee

2020

Nano Convergence

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Nanophotonics, manipulating light-matter interactions at the nanoscale, is an appealing technology for diversified biochemical and physical sensing applications. Guided-wave nanophotonics paves the way to miniaturize the sensors and realize on-chip integration of various photonic components, so as to realize chip-scale sensing systems for the future realization of the Internet of Things which requires the deployment of numerous sensor nodes. Starting from the popular CMOS-compatible silicon nanophotonics in the infrared, many infrared guided-wave nanophotonic sensors have been developed, showing the advantages of high sensitivity, low limit of detection, low crosstalk, strong detection multiplexing capability, immunity to electromagnetic interference, small footprint and low cost. In this review, we provide an overview of the recent progress of research on infrared guided-wave nanophotonic sensors. The sensor configurations, sensing mechanisms, sensing performances, performance improvement strategies, and system integrations are described. Future development directions are also proposed to overcome current technological obstacles toward industrialization.

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“…Here we focus on the spectral region around 4.2 µm relevant for CO2 detection. In our previous work we showed the feasibility of CO2 detection via evanescent-field absorption in slab and strip silicon waveguides, both using an external quantum-cascade laser or an integrated broadband thermal light source [1][2][3]. While our earlier work relied on an external MCT detector detecting gasinduced changes in light intensities, this work focuses on the development of integrated thermal detectors for mid-infrared radiation operating at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Sensitivity Comparison of Integrated Mid-Infrared Silicon-Based Photonic Detectors

et al. 2018

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Integrated silicon photonics in the mid-infrared is a promising platform for cheap and miniaturized chemical sensors, including gas and/or liquid sensors for environmental monitoring and the consumer electronics market. One major challenge in integrated photonics is the design of an integrated detector sensitive enough to detect minimal changes in light intensity resulting from, for example, the absorption by the analyte. Further complexity arises from the need to fabricate such detectors at a high throughput with high requirements on fabrication tolerances. Here we analyze and compare the sensitivity of three different chip-integrated detectors at a wavelength of 4.17 µm, namely a resistance temperature detector (RTD), a diode and a vertical-cavity enhanced resonant detector (VERD).

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Mid-infrared photonic gas sensing using a silicon waveguide and an integrated emitter

Cited by 32 publications

References 18 publications

Highly Selective CMOS-Compatible Mid-Infrared Thermal Emitter/Detector Slab Design Using Optical Tamm-States

Highly Selective CMOS-Compatible Mid-Infrared Thermal Emitter/Detector Slab Design Using Optical Tamm-States

Progress of infrared guided-wave nanophotonic sensors and devices

Sensitivity Comparison of Integrated Mid-Infrared Silicon-Based Photonic Detectors

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