Mid-infrared properties of a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">VO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>film near the metal-insulator transition

Choi, Hongseok; Ahn, J. S.; Jung, Jong Hoon; Noh, T. W.; Kim, D. H.

doi:10.1103/physrevb.54.4621

Cited by 276 publications

(143 citation statements)

References 33 publications

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“…For higher temperature measurements up to 500 K, a custom-built sample holder with a heating system was used. 13 We used a Fourier transform spectrometer ͑Bruker IFS66v/S͒ and a grating-type spectrophotometer ͑CARY 5G͒ in the photon energy region of 0.1-1.2 eV and 0.4-6.0 eV, respectively. In the deep ultraviolet region above 6.0 eV, we used synchrotron radiation from the normal incidence monochromator beamline at Pohang Light Source.…”

Section: Experimental and Theoretical Methodsmentioning

confidence: 99%

Temperature dependence of the electronic structure of theJeff=12Mott insulator
Moon
¹
,
Jin
²
,
Choi
³

et al. 2009
Phys. Rev. B
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5
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We investigated the temperature-dependent evolution of the electronic structure of the J eff = 1 2 Mott insulator Sr 2 IrO 4 using optical spectroscopy. The optical conductivity spectra ͑ ͒ of this compound has recently been found to exhibit two d-d transitions associated with the transition between the J eff = 1 2 and J eff = 3 2 bands due to the cooperation of the electron correlation and spin-orbit coupling. As the temperature increases, the two peaks show significant changes resulting in a decrease in the Mott gap. The experimental observations are compared with the results of first-principles calculation in consideration of increasing bandwidth. We discuss the effect of the temperature change in the electronic structure of Sr 2 IrO 4 in terms of local lattice distortion, excitonic effect, electron-phonon coupling, and magnetic ordering.

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Section: Experimental and Theoretical Methodsmentioning

confidence: 99%

Temperature dependence of the electronic structure of theJeff=12Mott insulator
Moon
¹
,
Jin
²
,
Choi
³

et al. 2009
Phys. Rev. B
Self Cite
157
25
100
5
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show abstract

“…VO 2 has an exceptionally small mean free path, [75][76][77][78] which is not large enough to impart any particle size dependence, and hence it is appropriate to use the dielectric functions obtained from films as input data for ε p . Finally Table III in order to allow comparisons with results for AR-coated VO 2 -based films in Table II.…”

Section: Nanothermochromics: Vo 2 Nanospheres Embedded In a Dielecmentioning

confidence: 99%

Thermochromic undoped and Mg-doped VO₂ thin films and nanoparticles: Optical properties and performance limits for energy efficient windows

Niklasson

Granqvist

2014

Journal of Applied Physics

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Undoped and Mg-doped thermochromic VO 2 films with atom ratios z ≡ Mg/(Mg + V) of 0 ≤ z < 0.21 were deposited by reactive DC magnetron sputtering onto heated glass and carbon substrates. Elemental compositions were found by Rutherford backscattering spectrometry. Optical constants were determined from transmittance and reflectance measurements and were used for modeling the optical properties of thin films and dilute nanoparticle composite layers below and above the critical temperature for thermochromic switching between a low-temperature infrared transparent state and a high-temperature infrared reflecting or absorbing state. Mgdoped films showed superior luminous transmittance T lum and solar transmittance modulation ΔT sol compared to undoped VO 2 films, and both of these parameters could be further enhanced by anti-reflection. VO 2 -containing nanocomposites had much larger values of T lum and ΔT sol than VO 2 -based films. Mg-doping was found to erode the properties of the nanocomposites. Approximate performance limits are given on T lum and ΔT sol for thermochromic VO 2 films, with and without Mg doping and antireflection coating, and also for VO 2 -containing dilute nanocomposites.--

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“…The interest on this compound is thus mainly focused on understanding the role and the relative importance of the electron-electron and the electron-lattice interaction in driving the MIT. Despite the great experimental and theoretical efforts [2], the understanding of this transition is still far from being complete [3,4,5,6,7]. In the R phase the V atoms, each surrounded by an oxygen octahedron, are equally spaced along linear chains in the c-axis direction and form a body-centered tetragonal lattice.…”

Section: Pacs Numbersmentioning

confidence: 99%

Evidence of a Pressure-Induced Metallization Process in MonoclinicVO2

Arcangeletti¹,

Baldassarre²,

Castro³

et al. 2007

Phys. Rev. Lett.

191

171

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Raman and combined trasmission and reflectivity mid infrared measurements have been carried out on monoclinic VO2 at room temperature over the 0-19 GPa and 0-14 GPa pressure ranges, respectively. The pressure dependence obtained for both lattice dynamics and optical gap shows a remarkable stability of the system up to P*∼10 GPa. Evidence of subtle modifications of V ion arrangements within the monoclinic lattice together with the onset of a metallization process via band gap filling are observed for P>P*. Differently from ambient pressure, where the VO2 metal phase is found only in conjunction with the rutile structure above 340 K, a new room temperature metallic phase coupled to a monoclinic structure appears accessible in the high pressure regime, thus opening to new important queries on the physics of VO2. PACS numbers:Since the first observation of the metal to insulator transition (MIT) in several vanadium oxides, these materials attracted considerable interest because of the huge and abrupt change of the electrical properties at the MIT. As usual in transition metal oxides, electronic correlation strongly affects the conduction regime of vanadium oxides, although, in some compounds, lattice degrees of freedom seem to play an important role. This is the case of VO 2 , which undergoes a first order transition from a high temperature metallic rutile (R) phase to a low temperature insulating monoclinic (M1) one. At the MIT temperature, T c =340 K, the opening of an optical gap in the mid-infrared (MIR) conductivity and a jump of several order of magnitude in the resistivity are observed [1]. The interest on this compound is thus mainly focused on understanding the role and the relative importance of the electron-electron and the electron-lattice interaction in driving the MIT. Despite the great experimental and theoretical efforts [2], the understanding of this transition is still far from being complete [3,4,5,6,7]. In the R phase the V atoms, each surrounded by an oxygen octahedron, are equally spaced along linear chains in the c-axis direction and form a body-centered tetragonal lattice. On entering the M1 insulating phase the dimerization of the vanadium atoms and the tilting of the pairs with respect to the c axis lead to a doubling of the unit cell, with space group changing from C 5 2h (R) to D 14 4h (M1) [8,9]. As first proposed by Goodenough [10], the V-V pairing and the off-axis zig-zag displacement of the dimers lead to a band splitting with the formation of a Peierls-like gap at the Fermi level. First principle electronic structure calculations based on local density approximation (LDA) showed the band splitting on entering the monoclinic phase, but failed to yield the opening of the band gap [11,12]. In fact, as early pointed out [13], the electron-electron correlation has to be taken into account to obtain the insulating phase. A recent theoretical paper where the electronic Coulomb repulsion U is properly accounted for, shows that calculations carried out joining dynamical mean field theory with...

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Mid-infrared properties of aVO2film near the metal-insulator transition

Cited by 276 publications

References 33 publications

Temperature dependence of the electronic structure of theJeff=12Mott insulator
Moon
¹
,
Jin
²
,
Choi
³

et al. 2009
Phys. Rev. B
Self Cite
157
25
100
5
View full text Add to dashboard Cite

Temperature dependence of the electronic structure of theJeff=12Mott insulator
Moon
¹
,
Jin
²
,
Choi
³

et al. 2009
Phys. Rev. B
Self Cite
157
25
100
5
View full text Add to dashboard Cite

Thermochromic undoped and Mg-doped VO₂ thin films and nanoparticles: Optical properties and performance limits for energy efficient windows

Evidence of a Pressure-Induced Metallization Process in MonoclinicVO2

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Mid-infrared properties of aVO2film near the metal-insulator transition

Cited by 276 publications

References 33 publications

Temperature dependence of the electronic structure of theJeff=12Mott insulatorMoon1, Jin2, Choi3 et al. 2009Phys. Rev. BSelf Cite157251005View full textAdd to dashboardCite

Temperature dependence of the electronic structure of theJeff=12Mott insulatorMoon1, Jin2, Choi3 et al. 2009Phys. Rev. BSelf Cite157251005View full textAdd to dashboardCite

Thermochromic undoped and Mg-doped VO2 thin films and nanoparticles: Optical properties and performance limits for energy efficient windows

Evidence of a Pressure-Induced Metallization Process in MonoclinicVO2

Contact Info

Product

Resources

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Temperature dependence of the electronic structure of theJeff=12Mott insulator
Moon
¹
,
Jin
²
,
Choi
³

et al. 2009
Phys. Rev. B
Self Cite
157
25
100
5
View full text Add to dashboard Cite

Temperature dependence of the electronic structure of theJeff=12Mott insulator
Moon
¹
,
Jin
²
,
Choi
³

et al. 2009
Phys. Rev. B
Self Cite
157
25
100
5
View full text Add to dashboard Cite

Thermochromic undoped and Mg-doped VO₂ thin films and nanoparticles: Optical properties and performance limits for energy efficient windows