2021
DOI: 10.1103/physrevmaterials.5.035202
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Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide

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Cited by 14 publications
(13 citation statements)
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“…The carrier tunability of the plasma frequency in doped semiconductors and transparent conducting oxides (TCOs) offers considerable control over the optical properties of these materials both during film growth [ 18–22 ] and through active modulation. [ 23,24 ] However, while this offers a mechanism for achieving some control over the SPP dispersion within the IR, the spectral dispersion and the group velocity cannot be controlled independently solely through changes to the carrier density.…”
Section: Introductionmentioning
confidence: 99%
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“…The carrier tunability of the plasma frequency in doped semiconductors and transparent conducting oxides (TCOs) offers considerable control over the optical properties of these materials both during film growth [ 18–22 ] and through active modulation. [ 23,24 ] However, while this offers a mechanism for achieving some control over the SPP dispersion within the IR, the spectral dispersion and the group velocity cannot be controlled independently solely through changes to the carrier density.…”
Section: Introductionmentioning
confidence: 99%
“…In this work, we leverage the exciting properties of n‐doped CdO in order to explore strong coupling in multilayer CdO films, achieving unprecedented control over the polaritonic dispersion. CdO is a TCO that has garnered significant attention recently as a low loss (electron mobilities exceeding 300 cm2 Vnormals1), [ 21,22,40,41 ] broadly tunable (λnormalp1.89 μm) [ 20 ] infrared plasmonic material that can be grown using molecular beam epitaxy or high power impulse magnetron sputtering (HiPIMS). [ 42,43 ] In addition to supporting low‐loss SPP resonances, n‐doped CdO has been shown to exhibit sharp, highly absorptive ENZ‐polariton and Berreman modes in deeply subwavelength films (<120 nm).…”
Section: Introductionmentioning
confidence: 99%
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“…This was first demonstrated using doped and undoped InAs, however, its hyperbolic modes were limited to the long-wavelength IR (LWIR), and Poisson calculations revealed high carrier diffusion between layers when the carrier density difference was low or the individual layer thickness was reduced to ≈ 50 nm, limiting the design space and optical confinement. [17] Cadmium oxide (CdO) is an attractive candidate to overcome these challenges and create single-material HMMs with low optical loss and broader spectral tunability (2-9 µm wavelengths [32,33] ). Sophisticated fabrication techniques like molecular beam epitaxy (MBE) [34] and high-power impulse magnetron sputtering (HiPIMS) [32,35,36] produce CdO thin films with consistently high crystal quality that enables high mobilities for a TCO (up to 500 cm 2 V −1 s −1 ), and thus relatively low optical losses.…”
Section: Introductionmentioning
confidence: 99%