Mid-wavelength Infrared Avalanche Photodetector with AlAsSb/GaSb Superlattice

Abstract

This work demonstrates a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with AlGaAsSb/GaSb multi-quantum well as the multiplication layer and InAsSb bulk material as the absorption layer. The InAsSb-based SAM-APD structure was grown by molecular beam epitaxy. The device exhibits a 100 % cut-off wavelength of ~5.3 µm at 150 K and ~5.6 µm at 200 K. At 150 K and 200 K, the responsivity of the SAM-APD reaches a peak value of 2.26 A/W and 3.84 A/W at 4.0 µm under -1.0 V applied bias, respectively. The SAM-APD device was designed to have electron dominated avalanching mechanism via the multi-quantum well structure as the avalanche architecture. A multiplication gain value of 29 at 200 K was achieved under −14.7 V bias voltage. The electron and hole impact ionization coefficients were calculated and compared. A carrier ionization ratio of ~0.097 was achieved at 200 K.

Advances in Mid-Infrared Single-Photon Detection

“…After-pulsin to avalanche events that originate from the emission of carriers that were trapped levels during previous avalanche events, due to semiconductors' impurities frequency gating (sinusoidal gating [63,64], a self-differing technique [65,66]), can the after-pulses probability since it reduces the total charge flow generated du avalanche event, maintaining high detection rates at the same time. Recently, new are emerging on materials and superlattices, such as HgCdTe [67], InAs/In AlAsSb/GaSb [69], which can extend the detection range of SPADs to MIR. H significantly lower cooling temperatures (≈80 K) are required to suppress the dark due to the low energy bandgap [67,70], resulting in increased costs and complexity devices.…”

AlGaN‐based solar‐blind avalanche photodetectors with gradually doped charge layer

“…It has been proved that AlGaN APDs exhibit better noise characteristics and avalanche gain by using the separate absorption and multiplication (SAM) structure 8–10 . The SAM structure can enhance gain and reduce multiplicative noise through impact ionization engineering 11 . Recently, Xie et al applied a low Al‐content p‐graded Al x Ga 1−x N layer and a high/low Al‐content AlGaN multiplication layer in back‐illuminated SAM AlGaN APD, and obtained superior maximum gain of 6.11 × 10 4 at 64.8 V 12 .…”

“…[8][9][10] The SAM structure can enhance gain and reduce multiplicative noise through impact ionization engineering. 11 Recently, Xie et al applied a low Al-content p-graded Al x Ga 1Àx N layer and a high/low Al-content AlGaN multiplication layer in back-illuminated SAM AlGaN APD, and obtained superior maximum gain of 6.11 Â 10 4 at 64.8 V. 12 In recent years, most efforts are exerted to enhance the electric field of multiplication layer to reduce the avalanche breakdown voltage and increase the gain of the AlGaN APDs, which is attributed to the polarization field induced in the multiplier layer. 13,14 In this work, we employed a gradually doped AlGaN layers as the charge region instead of the conventional AlGaN uniform doped charge layer based on a SAM-APD structure.…”