Abstract:We report a process for performing the middle electrode for a vertical field effect transistor (VOFET) by the evaporation of a tin (Sn) layer. Bare aluminum oxide (Al 2 O 3), obtained by anodization, and Al 2 O 3 covered with a polymethylmethacrylate (PMMA) layer were used as the gate dielectric. We measured the electrical resistance of Sn while the evaporation was carried out to find the best condition to prepare the middle electrode, that is, good lateral conduction associated with openings that give permeab… Show more
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