Midinfrared optical upconverter

Ban, Dayan; Luo, Hui; Liu, H. C.; Wasilewski, Z. R.; Paltiel, Yossi; Raizman, A.; Sher, A.

doi:10.1063/1.1921330

Cited by 26 publications

(12 citation statements)

References 19 publications

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“…[1][2][3][4] The near infrared optical upconverters in the eye-safe region around 1.5 m are of particular interest because of its many potential applications such as night vision, range finding, homeland security, and semiconductor wafer inspection. [5][6][7][8][9] Monolithic integration of a detector and an emitter using direct epitaxial growth 1,5 or wafer fusion technique [6][7][8] has been demonstrated.…”

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confidence: 99%

Near-infrared to visible light optical upconversion by direct tandem integration of organic light-emitting diode and inorganic photodetector

Ban

Han

et al. 2007

Applied Physics Letters

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confidence: 99%

Near-infrared to visible light optical upconversion by direct tandem integration of organic light-emitting diode and inorganic photodetector

Ban

Han

et al. 2007

Applied Physics Letters

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“…The LED determines a turn-on behavior, the applied bias first drops across the LED part and then additional bias goes to the photodiode part. Such I-V characteristic has been confirmed in the wafer bonded up-converter in mid-infrared 29 . We can find that the photocurrent of the USPD is almost exactly the same as the single InGaAs PIN when the bias above the threshold voltage (Fig.…”

Section: Device Modelmentioning

confidence: 53%

Infrared single photon detector based on optical up-converter at 1550 nm

Bai

Zhang

Shen

2017

Sci Rep

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High performance single photon detector at the wavelength of 1550 nm has drawn wide attention and achieved vast improvement due to its significant application in quantum information, quantum key distribution, as well as cosmology. A novel infrared up-conversion single photon detector (USPD) at 1550 nm was proposed to work in free-running regime based on the InGaAs/ InP photodetector (PD)- GaAs/AlGaAs LED up-converter and Si single photon avalanche diode (SPAD). In contrast to conventional In0.53Ga0.47As SPAD, the USPD can suppress dark count rate and afterpulsing efficiently without sacrificing the photon detection efficiency (PDE). A high PDE of ~45% can be achieved by optical adhesive coupling between up-converter and Si SPAD. Using a developed analytical model we gave a noise equivalent power of 1.39 × 10−18 WHz1/2 at 200 K for the USPD, which is better than that of InGaAs SPAD. This work provides a new single photon detection scheme for telecom band.

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“…Fourier transform infrared FTIR spectrometer (Bomem MB-100) was used to demonstrate upconversion operation from MIR to NIR, the experimental set up was similar to [3]. MIR radiation from the FTIR light source was shone onto the upconverter device, which was biased at 2.8 V and cooled at 80 K. The MIR radiation was absorbed by the InAsSb photodetector, generating a photocurrent which drove the LED to emit NIR radiation.…”

Section: Up Conversion Operation and Experimental Resultsmentioning

confidence: 99%

Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

Boucherif

Ban

Luo

et al. 2007

2007 Conference on Lasers and Electro-Optics (CLEO)

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We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 µm was demonstrated at temperatures up to 200 K. Introduction:Thermal imaging in the range of 3 to 5 µm wavelength has became increasingly important due to the large number of applications for military and civilian purposes [1] such as military and police target detection and acquisition, predictive maintenance (early failure warning) on mechanical and electrical equipment, and pollution effluent detection. The standard procedure for fabricating InSb-based focal plane arrays for thermal imaging is based on indium bump technology. However this "one-piece-at-a time" process limits the yield and scalability of this technique. An alternative method to implement a thermal imaging camera is to integrate monolithically a photodetector and a light emitting diode (LED) to form an optical upconverter [2]. By using such a mid-infared (MIR) to near-infrared (NIR) optical upconverter, in combination with a commerciallyavailable Si CCDs camera, MIR detection and large-area MIR imaging functionality can be achieved. In a previous study some of the present authors have successfully demonstrated upconversion operation in the range of 3-5 µm based on InSb photodiode and GaAs/AlGaAs LED [3], but the device works only at cryogenic temperatures, which requires expensive, bulky, power-hungry and time-consuming cooler to operate. These factors limit the applications of the InSb-based upconverters. The addition of As to the InSb compound material, yielding InAsSb ternary, slightly increases the band gap and consequently decreases the maximum detectable wavelength to below 5 µm. Nevertheless, the detector maintains the same excellent detectivity of an InSb infrared photodetector at much higher temperatures [4]- [5], which are attainable through a thermal-electrical cooler. This enhancement will have profound impacts on the thermal imaging devices in the 3-5 µm range for high performance, easy implementation and low cost thermal imaging camera. In this work, we proposed and demonstrated a wafer-fused MIR optical upconverter that consists of an InAsSb photodiode and a GaAs LED. The external upconversion efficiency was measured to be 0.06 W/W at 200 K.

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Midinfrared optical upconverter

Cited by 26 publications

References 19 publications

Near-infrared to visible light optical upconversion by direct tandem integration of organic light-emitting diode and inorganic photodetector

Near-infrared to visible light optical upconversion by direct tandem integration of organic light-emitting diode and inorganic photodetector

Infrared single photon detector based on optical up-converter at 1550 nm

Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

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