Midinfrared supercontinuum generation from 2 to 6  μm in a silicon nanowire

Singh, Neetesh; Hudson, Darren D.; Yu, Yi; Grillet, Christian; Jackson, Stuart D.; Casas-Bedoya, Alvaro; Read, A. M.; Atanackovic, Petar; Duvall, Steven G.; Palomba, Stefano; Luther‐Davies, Barry; Madden, Steve; Moss, David; Eggleton, Benjamin J.

doi:10.1364/optica.2.000797

Cited by 202 publications

(137 citation statements)

References 42 publications

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“…Mid-IR SC generation has already been reported in a number of planar waveguide systems including SOI [112], a-Si [113], Si-on-sapphire [114], and chalcogenide glasses (ChGs) [34,61]. In particular, broadband SC from 2.2 μm to 10.2 μm was demonstrated in a ridge waveguide made from Ge 11.5 As 24 Se 64.5 ChG core embedded inside a Ge 11.5 As 24 S 64.5 cladding and pumped by 330-fs pulses at a center wavelength of 4.184 μm (Figure 7) [115].…”

Section: Nonlinear Frequency Generation or Conversionmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Section: Nonlinear Frequency Generation or Conversionmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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“…This limits the number of different molecules that can be detected with a single system. An appealing approach that has been suggested by the silicon photonics community is to create mid-IR CMOS compatible integrated photonic platforms [1,2] that are capable of yielding broadband optical sources via nonlinear effects such as supercontinuum, frequency combs, and others [8][9][10][11][12][13][14]. More generally, the mid-IR has been predicted to be a promising wavelength range for nonlinear devices based on group IV materials (like Si, Ge and Si-Ge).…”

Section: Introductionmentioning

confidence: 99%

“…In particular, the nonlinear loss associated with two photon absorption (TPA) that limits device performance in all of these materials at telecom wavelengths [15][16][17] vanishes at longer wavelengths. This potentially could open the door to realizing photonic devices with new capabilities such as, super continuum [8][9][10], wide bandwidth frequency combs [11,12] and parametric waveguide amplifiers with positive net gain [13,14]. However, apart from one report of nonlinear optics out to 6 μm in the silicon on sapphire (SOS) platform [9], Si has hardly been investigated beyond the short-wavelength infrared (SWIR), limited to 3 μm, due to both absorption in the cladding material (i.e.…”

Section: Introductionmentioning

confidence: 99%

“…This potentially could open the door to realizing photonic devices with new capabilities such as, super continuum [8][9][10], wide bandwidth frequency combs [11,12] and parametric waveguide amplifiers with positive net gain [13,14]. However, apart from one report of nonlinear optics out to 6 μm in the silicon on sapphire (SOS) platform [9], Si has hardly been investigated beyond the short-wavelength infrared (SWIR), limited to 3 μm, due to both absorption in the cladding material (i.e. silica in the case of the silicon on insulator (SOI)) and the impact of higher order (3 and 4) photon absorption and the ensuing free carrier absorption [18,19].…”

Section: Introductionmentioning

confidence: 99%

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Mid-infrared nonlinear optical response of Si-Ge waveguides with ultra-short optical pulses

Carletti¹,

Sinobad²,

Ma³

et al. 2015

Opt. Express

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Abstract:We characterize the nonlinear optical response of low loss Si 0.6 Ge 0.4 / Si waveguides in the mid-infrared between 3.3 μm and 4 μm using femtosecond optical pulses. We estimate the three and four-photon absorption coefficients as well as the Kerr nonlinear refractive index from the experimental measurements. The effect of multiphoton absorption on the optical nonlinear Kerr response is evaluated and the nonlinear figure of merit estimated providing some guidelines for designing nonlinear optical devices in the mid-IR. Finally, we compare the impact of free-carrier absorption at mid-infrared wavelengths versus near-infrared wavelengths for these ultra-short pulses. References and links1. R. Soref, "Mid-infrared photonics in silicon and germanium," Nat. Photonics 4(8), 495-497 (2010). 2. B. Jalali, "Nonlinear optics in the mid-infrared," Nat. Photonics 4(8), 506-508 (2010). Brun, S. Ortiz, P. Labeye, S. Nicoletti, and C. Grillet, "Nonlinear optical response of low loss silicon germanium waveguides in the mid-infrared," Opt. Express 23(7), 8261-8271 (2015).

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“…Finally, single mode operation is generally preferred to minimize power leakage due to mode cross-talk. In practice however, this condition is often relaxed in nonlinear optical devices showing a broadband anomalous regime [20][21][22]. In that case, single mode filtering regions have been proposed to address intermodal coupling in multimode structures and thus ensure propagation in the fundamental mode [23].…”

Section: Design Rules For Ge-rich Graded-index Si 1-x Ge X Mid-ir Ribmentioning

confidence: 99%

Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics

Ramírez¹,

Vakarin²,

Frigerio³

et al. 2017

Opt. Express

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To cite this version:J-M Ramirez, V Vakarin, J Frigerio, P Chaisakul, D Chrastina, et al.. Ge-rich graded-index Si 1-x Ge x waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics. Optics Express, Optical Society of America, 2017, 25 (6) Abstract:This work explores the use of Ge-rich graded-index Si 1-x Ge x rib waveguides as building blocks to develop integrated nonlinear optical devices for broadband operation in the mid-IR. The vertical Ge gradient concentration in the waveguide core renders unique properties to the guided optical mode, providing tight mode confinement over a broadband mid-IR wavelength range from λ = 3 µm to 8 µm. Additionally, the gradual vertical confinement pulls the optical mode upwards in the waveguide core, overlapping with the Ge-rich area where the nonlinear refractive index is larger. Moreover, the Ge-rich graded-index Si 1-x Ge x waveguides allow efficient tailoring of the chromatic dispersion curves, achieving flat anomalous dispersion for the quasi-TM optical mode with D ≤ 14 ps/nm/km over a ~ 1.4 octave span while retaining an optimum third-order nonlinear parameter, γ eff . These results confirm the potential of Ge-rich graded-index Si 1-x Ge x waveguides as an attractive platform to develop mid-IR nonlinear approaches requiring broadband dispersion engineering.

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Midinfrared supercontinuum generation from 2 to 6 μm in a silicon nanowire

Cited by 202 publications

References 42 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared nonlinear optical response of Si-Ge waveguides with ultra-short optical pulses

Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics

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