Migration behaviour of Europium implanted into single crystalline 6H-SiC

Abstract

Highlights • Eu ions were implanted into 6H-SiC at 600 °C. • Annealing studies were performed at temperatures ranging from 1000 to 1400 °C. • The migration of Eu together with annealing of radiation damage were performed. • The migration of Eu was explained in terms of trapping and de-trapping by radiation damage.

Effects of Ag and Sr dual ions implanted into SiC

“…These include out-of-pile release measurements from irradiated TRISO fuel [9][10][11][12], and ion implantation [13][14][15][16][17]. Little has been reported on the migration behaviour of Sr, and Eu in SiC [18][19][20][21][22]. In a nuclear reactor environment, fission products co-exist.…”