Migration of Atomic and Molecular Hydrogen in SiO<sub>2</sub>: A Molecular Dynamics Study

Bongiorno, Angelo; Colombo, Luciano

doi:10.1002/bbpc.199700030

Cited by 2 publications

(1 citation statement)

References 16 publications

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“…Some of this hydrogen enters into and diffuses through the BPSG. Although the literature is not clear on this point, 10 it seems as if hydrogen prefers to diffuse through SiO 2 in molecular form. 11,12 However, it is likely that some of the hydrogen molecules first dissociate on the surface of the oxide and then diffuse in atomic form through the oxide.…”

Section: Resultsmentioning

confidence: 99%

Influence on the Long-Term Stability of Polysilicon Resistors from Traces of Titanium and Tungsten

Rydberg

Smith

2000

J. Electrochem. Soc.

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Trace amounts of a residue, formed during patterning of the TiW film by etching in H 2 O 2 , cause a significant improvement in the long-term stability of polysilicon integrated circuit resistors. The stabilization is the result of a reduction in the amount of hydrogen reaching the grain boundary dangling bonds during processing. This appears to be due to a retardation in the diffusion of hydrogen caused by an ability of the TiW residue on the borophosphosilicate glass surface to change the relative amounts of atomic and molecular hydrogen. The amounts of hydrogen involved in the resistivity changes have been evaluated. Typically, for 500 nm thick 5 ϫ 10 14 cm Ϫ2 boron-implanted chemical vapor deposited polysilicon films with a grain size of 150 nm, the concentration of grain boundary traps was 3.8 ϫ 10 12 cm Ϫ2 . The amount of hydrogen passivating dangling bonds after hydrogen annealing and plasmaenhanced chemical vapor deposition nitride passivation was 5.9 ϫ 10 11 cm Ϫ2 . After a 1000 h electrical and thermal stress at 150ЊC saturated the resistance drift, the amount of hydrogen that left the dangling bonds was 4.5 ϫ 10 10 cm Ϫ2 . The presence of TiW residue reduced the amount of hydrogen reaching the dangling bond by 1.3 ϫ 10 11 cm Ϫ2 and that leaving after stressing by 1.8 ϫ 10 10 cm Ϫ2 .

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Section: Resultsmentioning

confidence: 99%

Influence on the Long-Term Stability of Polysilicon Resistors from Traces of Titanium and Tungsten

Rydberg

Smith

2000

J. Electrochem. Soc.

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Characterization, modeling and physical mechanisms of different surface treatment methods at room temperature on the oxide and interfacial quality of the SiO2 film using the spectroscopic scanning capacitance microscopy

Wong

2017

Results in Physics

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Migration of Atomic and Molecular Hydrogen in SiO₂: A Molecular Dynamics Study

Cited by 2 publications

References 16 publications

Influence on the Long-Term Stability of Polysilicon Resistors from Traces of Titanium and Tungsten

Influence on the Long-Term Stability of Polysilicon Resistors from Traces of Titanium and Tungsten

Characterization, modeling and physical mechanisms of different surface treatment methods at room temperature on the oxide and interfacial quality of the SiO2 film using the spectroscopic scanning capacitance microscopy

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Migration of Atomic and Molecular Hydrogen in SiO2: A Molecular Dynamics Study

Cited by 2 publications

References 16 publications

Influence on the Long-Term Stability of Polysilicon Resistors from Traces of Titanium and Tungsten

Influence on the Long-Term Stability of Polysilicon Resistors from Traces of Titanium and Tungsten

Characterization, modeling and physical mechanisms of different surface treatment methods at room temperature on the oxide and interfacial quality of the SiO2 film using the spectroscopic scanning capacitance microscopy

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Migration of Atomic and Molecular Hydrogen in SiO₂: A Molecular Dynamics Study