Migration process of an Al adatom on the Si(111) surface

Hoshino, T.; Okano, Kaori; Enomoto, Nobuyuki; Hata, Masayuki; Tsuda, Minoru

doi:10.1016/s0039-6028(98)00921-2

Cited by 16 publications

(2 citation statements)

References 37 publications

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“…The influence of the embedding H atoms has already been shown to be trivial if they are located at the third-nearest neighbors from the reacting atom. 5,19,20 Geometry optimizations were executed for each cluster to determine the stationary points on the potentialenergy hypersurface; i.e., the stable states and the transition state of the reaction. During geometry optimization, all Si and O atoms were allowed to move within a constraint of the mirror symmetry, whereas the embedding H atoms were fixed at ideal crystalline positions.…”

Section: Methods Of Calculationmentioning

confidence: 99%

Mechanism of inward oxygen diffusion on H-, OH-, and nonterminated silicon surfaces

Hoshino

Nishioka

2001

Phys. Rev. B

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Generation of an electrochemical proton gradient is the first step of cell bioenergetics. In prokaryotes, the gradient is created by outward membrane protein proton pumps. Inward plasma membrane native proton pumps are yet unknown. We describe comprehensive functional studies of the representatives of the yet noncharac-terized xenorhodopsins from Nanohaloarchaea family of microbial rhodopsins. They are inward proton pumps as we demonstrate in model membrane systems, Escherichia coli cells, human embryonic kidney cells, neuro-blastoma cells, and rat hippocampal neuronal cells. We also solved the structure of a xenorhodopsin from the nanohalosarchaeon Nanosalina (NsXeR) and suggest a mechanism of inward proton pumping. We demonstrate that the NsXeR is a powerful pump, which is able to elicit action potentials in rat hippocampal neuronal cells up to their maximal intrinsic firing frequency. Hence, inwardly directed proton pumps are suitable for light-induced remote control of neurons, and they are an alternative to the well-known cation-selective channelrhodopsins.

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Section: Methods Of Calculationmentioning

confidence: 99%

Mechanism of inward oxygen diffusion on H-, OH-, and nonterminated silicon surfaces

Hoshino

Nishioka

2001

Phys. Rev. B

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“…Even though there are many experimental studies of group IIIA nitrides ,− deposited on Si(111) and mainly on the growth of their films on Si(111) surface, theoretical studies have been almost entirely devoted to the adsorption of group IIIA metal atoms (B, Al, Ga, In) on Si(111) (see, for instance, refs 18− and references therein), while recently work was published by the present authors on Ga as well as on gallium nitrides adsorbed on Si(111). , …”

Section: Introductionmentioning

confidence: 98%

Theoretical Study of Adsorption of Group IIIA Nitrides on Si(111)

2009

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Adsorption of group IIIA nitrides (MN, M = B, Al, Ga, and In) on a model Si(111) surface has been studied by density functional theory calculations. Eight stable structures were determined for the MN adsorbed species. Their lowest energy structures are those with the adsorbate forming a bridge between the Si adatom and the Si rest atom as well as open structures with the M−N molecule attached to a Si adatom or a Si rest atom via N. The energy ordering of these stable structures varies according to the particular metal atom. The binding energy, including the basis set superposition error, of the lowest calculated minimum MN−Si(111) structure for the different metals M ranges from 5.1 to 6.0 eV.

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Surface diffusion on metals, semiconductors, and insulators

Seebauer¹,

Jung²

Adsorbed Layers on Surfaces. Part 1: Adsorption on Surfaces and Surface Diffusion of Adsorbates

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Migration process of an Al adatom on the Si(111) surface

Cited by 16 publications

References 37 publications

Mechanism of inward oxygen diffusion on H-, OH-, and nonterminated silicon surfaces

Mechanism of inward oxygen diffusion on H-, OH-, and nonterminated silicon surfaces

Theoretical Study of Adsorption of Group IIIA Nitrides on Si(111)

Surface diffusion on metals, semiconductors, and insulators

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