2017
DOI: 10.1039/c7tc02228j
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Mild preparation and high fluorescence emission efficiency of europium-doped gallium nitride nanocrystals and first-principles density functional theoretical analysis of optical properties

Abstract: Eu:GaN nanocrystals have strong fluorescence emission and efficient energy transfer by means of DFT simulations. SiO2 coating improves the fluorescence quantum yield.

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Cited by 6 publications
(1 citation statement)
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“…[2] Many attempts concerning MOVPE-grown GaN, GaN nanowires/ nanocrystals, GaN quantum dots doped with Eu or in some cases with Tb, can be found in literature. [32][33][34][35][36][37][38][39] (see supplement) All these investigations consist only of monolayers or 2D materials having very few nanometers of thickness.…”
Section: Mainmentioning
confidence: 99%
“…[2] Many attempts concerning MOVPE-grown GaN, GaN nanowires/ nanocrystals, GaN quantum dots doped with Eu or in some cases with Tb, can be found in literature. [32][33][34][35][36][37][38][39] (see supplement) All these investigations consist only of monolayers or 2D materials having very few nanometers of thickness.…”
Section: Mainmentioning
confidence: 99%