Milestones in deep reactive ion etching

Laermer, Franz; Urban, Andrea

doi:10.1109/sensor.2005.1497272

Cited by 24 publications

(7 citation statements)

References 5 publications

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“…The surfaces after going through the F-based etching chemistry are typically covered by a layer of fluorine-containing species, e.g. it is wellknown that a fluorocarbon layer presents on the sidewalls of the structural materials from the Bosch process 1 . The studies of the F-chemistry etched surfaces are of great impact to both microelectronics processing and device performance.…”

mentioning

confidence: 99%

“…XeF 2 is an isotropic gas phase etchant of Si. Because of its high etch rate and high selectivity against many metals, dielectrics, and polymers used in traditional integrated circuit fabrications, XeF 2 has been a widely used to etch Silicon isotropically etchant in microelectromechanical systems (MEMS) 1 processing since 1995 2 . XeF 2 is also used as a fluorination reagent in organic chemistry, due to its mild reactivity and high selectivity 3,4 While XeF 2 is a good etchant of silicon 5 , Al and Al 2 O 3 are among the materials which are not etched by XeF 2 and therefore are commonly used as structural materials.…”

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confidence: 99%

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Influence of reaction with XeF2 on surface adhesion of Al and Al2O3 surfaces

Zhang

Park

Huang

et al. 2008

Applied Physics Letters

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confidence: 99%

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confidence: 99%

Influence of reaction with XeF2 on surface adhesion of Al and Al2O3 surfaces

Zhang

Park

Huang

et al. 2008

Applied Physics Letters

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“…The Scherrer formula was utilized to estimate the mean crystallite size of deposited poly-Si. By using the information gathered from the peak present at 47.4°, an approximated crystallite size of 10 nm was obtained by using equation (3). The results suggest that nanocrystalline Si was deposited on the surface…”

Section: Resultsmentioning

confidence: 99%

“…The technique offers a highly anisotropic vertical etch profile which does not depend on crystal orientation. Thus, DRIE offers excellent pattern transfer capability [3]. Due to its many advantages, DRIE revolutionized the way microfabrication was previously performed.…”

Section: Introductionmentioning

confidence: 99%

Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry–Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation

Goh

Chen

Shiau

et al. 2019

J. Micromech. Microeng.

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Deep reactive ion etching (DRIE) is an important process for etching vertical structures for microelectromechanical systems. Due to the sidewall profile of some photoresists as well as effects from upstream processes, bulk micromachined structures, to a certain extent, could differ from expected. Concerning photonics applications, minute deviations from the intended design might alter its optical characteristics. The most popular approach is to introduce a compensation factor during mask design. However, such a method is not robust enough to accommodate batch variations due to varying process conditions.In one particular example specific to this work, the simulated passband for a Si-air Fabry-Perot interferometer configuration was 3.67 μm. However, post DRIE the passband was measured to be 3.40 μm. To resolve this discrepancy, linewidth compensation using low-pressure chemical vapor deposition (LPCVD) poly-Si is presented. When 170 and 194 nm of poly-Si were separately deposited, the passbands redshifted to 3.54 and 3.57 μm, respectively. With the LPCVD poly-Si layer being highly conformable, the full width half maximum remains unchanged at 80 nm. An on-chip linear variable optical filter was demonstrated with a compensation of 194 nm poly-Si. It was observed that the working range redshifted from 3.0-3.9 μm to 3.3-4.5 μm.

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“…Therefore, success seems to be personalized, whereat a small team or one person is the driver of innovation during such long time frames [e.g. DMD: Larry Hornbeck (Hornbeck, ), Bosch Process: Franz Lärmer and Andrea Urban (Laermer and Urban, )].…”

Section: Research Framementioning

confidence: 99%

Managing technology development teams – exploring the case of microsytems and nanosystems

et al. 2013

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New sensor and actuator concepts based on microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) are increasingly being developed from lab status toward commercialization. The associated technology development for the provision of improved functionalities and cost reduction often requires highly interdisciplinary development teams where scientists and engineers from different disciplines closely work together. Managing these teams is a key challenge for MEMS/NEMS organizations. This research examined eight technology developments in MEMS/NEMS in international companies. Based on in-depth interviews with innovators, we explored the managerial aspects of development teams. We identified and discuss (1) leadership, (2) market, (3) team structure and culture, (4) innovation motivation, (5) innovation driver, (6) experience and know-how, and (7) product vision and innovation strategy as key influences on teams in the early development phases of MEMS/NEMS. Our study reveals that integrative and manufacturing know-how and capabilities are the most critical capacities to be developed by the team from the idea to the concept phase. The team's lived experience during long development times from 5 to 10 years or more may allow a fast response to changes from market and technology (e.g. materials and nanotechnology). The results indicate that the process of how know-how and capabilities are created by the team is more important than the mere existence of specific expertise.tromechanical systems/nanoelectromechanical systems (MEMS/NEMS) companies work on new concepts to reduce costs through miniaturization and a decrease of material consumption (Vigna, 2009;Burger and Staake, 2010). A positive side effect is that more functionality and higher performance can be integrated on the same or smaller footprint

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Milestones in deep reactive ion etching

Cited by 24 publications

References 5 publications

Influence of reaction with XeF2 on surface adhesion of Al and Al2O3 surfaces

Influence of reaction with XeF2 on surface adhesion of Al and Al2O3 surfaces

Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry–Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation

Managing technology development teams – exploring the case of microsytems and nanosystems

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