Milestones of microwave and millimeter-wave technologies -Helical Progress in Device and Circuit-

Abstract

Abstract:The helical structure of progress in microwave and millimeter-wave technologies, with a focus on active device technology and circuit technology, is overviewed with some examples. The position of, and the possibilities for emerging GaN power devices and Si RF devices are described. In addition, as a new trend for methods in global analysis combining electro-magnetic waves and semiconductor devices, FDTD co-simulation is overviewed with the latest example on a 60 GHz amplifier module. Finally, the circuit technology in which the helical structure strongly dominates is overviewed. As one of endless targets for microwave circuit technology, the latest design technique for high power efficiency microwave circuits is introduced, in which co-simulation of electro-magnetic waves and semiconductor devices are effectively used.

An 8.1-W, 50.9% efficient continuous Class-F mode power amplifier developed using 0.25-μm GaN/SiC technology for 5G NR n79 band

“…Such technology enables high Pout to be achieved because of it has a higher dc voltage and power density than does GaAs technology. The use of GaN in various applications has increased considerably [10,11]. The use of discrete GaN devices can offer high performance, cost effectiveness, and easy component tunability [12,13,14].…”