Millimeter and terahertz detectors based on plasmon excitation in InGaAs/InP HEMT devices

Esfahani, Nima Nader; Peale, Robert E.; Buchwald, Walter R.; Hendrickson, Joshua R.; Cleary, Justin W.

doi:10.1117/12.2006137

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2013

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“…This polarization study is archived in Ref. 11. These studies simply confirm that the well-known possible change of polarization angle on reflection or refraction 17 is likely occurring in our experiment.…”

Section: Resultssupporting

confidence: 86%

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Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

Esfahani

Peale

Buchwald

et al. 2013

Journal of Applied Physics

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A polarized photoresponse to mm-wave radiation over the frequency range of 40 to 108 GHz is demonstrated in a grating-gated high electron mobility transistor (HEMT) formed by an InGaAs/InP heterostructure. The photoresponse is observed within the plasmon resonance absorption band of the HEMT, whose gate consists of a 9 μm period grating that couples incident radiation to plasmons in the 2D electron gas. Gate-bias changes the channel carrier concentration, causing a corresponding change in photoresponse in agreement with theoretical expectations for the shift in the plasmon resonance band. The noise equivalent power is estimated to be 235 pW/Hz1/2.

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Section: Resultssupporting

confidence: 86%

“…This analysis has been archived in Ref. 11. Relaxation time s at 4 K was determined to be 0.37 ps and sheet charge densities n s to be (1.39, 1.21, and 1.04) Â 10 12 cm À2 at gate biases of (0, À0.1, and À0.2) V, respectively.…”

Section: Methodsmentioning

confidence: 99%