Millimeter frequency conversion using Au-n-type GaAs Schottky barrier epitaxial diodes with a novel contacting technique

Young, D.T.; Irvin, J.C.

doi:10.1109/proc.1965.4511

Cited by 99 publications

(16 citation statements)

References 7 publications

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“…In the mid 1960s, Young and Irvin developed the first lithographically defined GaAs Schottky diodes for high frequency applications [104]. Their basic diode struc− ture was next replicated by a variety of groups.…”

Section: Pyroelectric Detectormentioning

confidence: 99%

“…29(a) is similar to the so−called "honeycomb" diode chip design, first produced by Young and Irvin in 1965 [104,107]. This design has been the most important steps toward a practical Schottky diode mixer for THz frequency applications, with several thou− sand diodes on a single chip and where parasitic losses such as the series resistance and the shunt capacitance are mini− mized.…”

Section: Pyroelectric Detectormentioning

confidence: 99%

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Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

322

225

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Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands.In the paper, issues associated with the development and exploitation of THz radiation detectors and focal plane arrays are discussed. Historical impressive progress in THz detector sensitivity in a period of more than half century is analyzed. More attention is put on the basic physical phenomena and the recent progress in both direct and heterodyne detectors. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Also, the operational conditions of THz detectors and their upper performance limits are reviewed. Finally, recent advances in novel nanoelectronic materials and technologies are described. It is expected that applications of nanoscale materials and devices will open the door for further performance improvement in THz detectors.

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Section: Pyroelectric Detectormentioning

confidence: 99%

Section: Pyroelectric Detectormentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

322

225

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“…32). In the mid 1960s Young and Irvin [33] developed the first lithographically defined GaAs Schottky diodes for high fre− quency applications. Their basic diode structure was next replicated by a variety of groups.…”

Section: Schottky Barrier Diodesmentioning

confidence: 99%

“…10(a) is similar to the so−called "honeycomb" diode chip design, first produced by Young and Irvin in 1965 [33]. Due to limitation of whisker technology, such as constraints on design and repeatability, starting in the 1980s, the efforts were made to produce pla− nar Schottky diodes [see Fig.…”

Section: Schottky Barrier Diodesmentioning

confidence: 99%

Semiconductor detectors and focal plane arrays for far-infrared imaging

Rogalski

2013

Opto-Electronics Review

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The detection of far-infrared (far-IR) and sub-mm-wave radiation is resistant to the commonly employed techniques in the neighbouring microwave and IR frequency bands. In this wavelength detection range the use of solid state detectors has been hampered for the reasons of transit time of charge carriers being larger than the time of one oscillation period of radiation. Also the energy of radiation quanta is substantially smaller than the thermal energy at room temperature and even liquid nitrogen temperature. The realization of terahertz (THz) emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics.Development of semiconductor focal plane arrays started in seventies last century and has revolutionized imaging systems in the next decades. This paper presents progress in far-IR and sub-mm-wave semiconductor detector technology of focal plane arrays during the past twenty years. Special attention is given on recent progress in the detector technologies for real-time uncooled THz focal plane arrays such as Schottky barrier arrays, field-effect transistor detectors, and microbolometers. Also cryogenically cooled silicon and germanium extrinsic photoconductor arrays, and semiconductor bolometer arrays are considered.

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“…As described in Chapter 1, the first terahertz GaAs Schottky diodes were created by pressing a metal whisker against a predefined GaAs Schottky area [24]. Whisker contacted diodes produced the some of the lowest device parasitics, and as a result the highest operational frequencies at that time [25].…”

Section: Organization Of Thesismentioning

confidence: 99%

Submillimeter-Wave Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Membranes

Alijabbari¹

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GaAs Schottky diodes are the central component of Terahertz (THz) metrology instrumentation. The frequency translating property of the Schottky diode is used in ground and space based observatories and for characterization of other THz devices. As detectors, GaAs Schottky diodes are used for measuring signal power levels, as mixers they are used in heterodyne receivers, and as variable capacitors they are used in frequency multipliers.The focus of this dissertation is the integration of GaAs Schottky diodes on silicon-on-insulator (SOI) substrate carriers to better control the device parasitics and to accommodate assembly of fully integrated diode-based circuits. During research into this process, a unique quasi-vertical diode geometry was developed in which the ohmic contact lies directly below the Schottky anode. While similar in concept to the first whisker contacted Schottky diodes, the quasi-vertical diode is nevertheless a planar device that is readily integrated with other components supported by the SOI substrate, including beamleads for electrical connection. To illustrate the advantages of this technology, 40-to-80 GHz doublers and a new 40-to-160 GHz quadrupler were designed and implemented using the quasi-vertical diodes and heterogeneous integration methods developed in this research. These multipliers are the first demonstrated fully-integrated GaAs varactor circuits fabricated on SOI, yielding record performance in multiplication efficiency, and demonstrating the benefits of the novel diode architecture and substrate replacement technology.ii

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Millimeter frequency conversion using Au-n-type GaAs Schottky barrier epitaxial diodes with a novel contacting technique

Cited by 99 publications

References 7 publications

Terahertz detectors and focal plane arrays

Terahertz detectors and focal plane arrays

Semiconductor detectors and focal plane arrays for far-infrared imaging

Submillimeter-Wave Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Membranes

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