Millimeter-Sized Monoisotopic Cubic ¹⁰Boron Phosphide

Abstract

Boron isotope-containing semiconductors with many novel physical properties have attracted extensive research interest in the areas such as device thermal management, optical components, and neutron detection. However, the existence of strong intrinsic covalent bonding leads to the high-temperature and high-pressure growth conditions of the single crystals of Bcompound semiconductors, which has been a great bottleneck limiting their development. Here, high-quality monoisotopic cubic 10 BP single crystals at a millimeter scale of approximately 1 mm were grown by a multistep ripening method based on the gas− liquid−solid principle for crystal growth. Structural and morphological analyses have shown that the 10 BP single crystals prepared by this method possess a single cubic phase and high crystalline quality. The isotopic effect gives rise to the shift of characteristic peaks in the Raman spectrum. Besides, results obtained through reflection spectrum, photoluminescence (PL), and theoretical calculations demonstrate that 10 BP is a semiconductor with an indirect band gap beyond 2 eV. All of these findings can prove that the multipart maturation method is a feasible way to synthesize high-quality 10 BP single crystals, which provides a novel and competitive route for the study of isotopic c-BP and the growth of large-sized crystals.

Ultralarge Elastic Deformation (180° Fold) of Cubic-natBP Microwires for Wearable Flexible Strain Sensors

“…Cubic boron phosphide (c-BP) is a typical III–V zinc-blende semiconductor with strong covalent bonds, which is composed of two light elements. , The characteristics such as large band gap (2.0 eV), large neutron absorption cross-section (3840 barns), high thermal stability (a stable composition up to about 1130 °C), excellent mechanical properties (hardness up to 40 GPa), high thermal conductivity (BP, 460 W m –1 K –1 at 300 K; 11 BP, 590 W m –1 K –1 ), , high mobility (5400 cm 2 /(V·s) at 300 K), and chemical inertness have made BP possess potential applications in photoelectronic fields, even in an extreme environment. So far, BP has exhibited great performance in cases of wide-gap window solar cells, wide-gap emitter transistors, solid-state medium detection, emitter transistors, Schottky diodes, heat diffusers, three-dimensional (3D) integrated circuits, and infrared transparent coating materials .…”