Millimeter-wave AlGaN/GaN HEMT breakdown voltage enhancement by a recessed float field plate

Zhang, Sheng; Ke, Wei; Ma, Xiaohua; Zhang, Yi Chuan; Lei, Tianmin

doi:10.7567/1882-0786/ab196c

Cited by 9 publications

(5 citation statements)

References 35 publications

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“…the formation of 2DEG but also keeps device reliability high. Study of various device structures having mole-fraction of Al as 0.25 can be found in [51]- [53] justifying the same. The device is designed and is numerical analyzed using Sentaurus TCAD [54].…”

Section: Numerical Simulation/physical Modelmentioning

confidence: 62%

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

2021

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Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving material and processing technology. In this paper, a detailed analysis of gate-shaped AlGaN / GaN HEMT with field plate is presented. Although AlGaN / GaN HEMT with field-plate is well known, its blending with gate-shaping leading to a more robust and reliable behaviour is described in this paper. It is observed that the threshold voltage and transconductance invariably remain constant for various combinations of gate-shaped and field plate placements. The threshold voltage for all the devices are found to be -5.8 V. The peak transconductance for the devices without field plate and with field plate is ∼ 0.16 S/mm and ∼ 0.15 S/mm, respectively. Apart from leakage current, the electric field also gets mitigated for both gate-shaped and field-plated devices by ∼ 45% and ∼ 68%, respectively. The moderation in electric field further assists in the reduction of electron temperature for gate-shaped and field-plated structures by ∼ 12% and ∼ 85%, respectively. Additionally, breakdown voltage increases for the gate-shaped devices to 133 V as compared to 120 V of conventional devices without field plate. Significant reduction in leakage current, electric field, and electron temperature is accompanied by a minor increment in capacitance for the field-plated structure, hence, the proposed structure is expected to enhance reliability of the device. Thus, it is anticipated that the proposed devices with enhanced reliability would be a step ahead of conventional devices and would find major applications in high power domain.INDEX TERMS Capacitance voltage (CV), electron temperature, GaN HEMT, gate shape, leakage current.

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Section: Numerical Simulation/physical Modelmentioning

confidence: 62%

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

2021

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“…The reason is as follows: the introduction of the F-FP will cause slight changes in the gate-to-source capacitance and drain-to-gate capacitance of the device, and it only has a minor impact on the DC characteristics of the device. [32][33][34] Due to the positive bias of the F-FP (i.e., no channel depletion). 35,36 On the other hand the simulation is performed under ideal conditions.…”

Section: Simulation and Discussionmentioning

confidence: 99%

Simulation Research on High-Voltage β-Ga₂O₃ MOSFET Based on Floating Field Plate

Wang,

Cai,

Tian

et al. 2024

ECS J. Solid State Sci. Technol.

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A simulation model of a depletion-mode (D-mode) β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) was constructed by Silvaco ATLAS technology computer-aided design (TCAD) simulation, which employs an epitaxial drift layer grown on a sapphire substrate. On this basis, the floating field plate (F-FP) structure based on the gate-pad-connected field plate (P-FP) was proposed to improve the breakdown characteristics of the device, which was easily prepared. The working principle of F-FP was investigated with the help of the device with one F-FP, based on the principle that the number of floating field plates increases on an optimized floating field plate structure. Subsequently, the devices with two and three floating field plates were simulated in turn, and the optimal structural parameters of the three F-FPs device were finally obtained, and the breakdown voltage was 3800 V. In addition, it was found that the device breakdown voltage increased by approximately 500-600 V for each additional floating field plate.

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“…One typical technique is the field plate (FP), which gains the widest applications due to its effectiveness and simplicity. Although various FP structures such as the gate FP, source FP, drain FP, floating FP and stepped FP have been developed [4][5][6][7][8][9][10][11], they have a consistent principle that the improved distribution of E channel relies on inducing charges at the FP end. Since these induced charges can expand the depleted channel and introduce new peaks of E channel , the E channel_gate is reduced.…”

Section: Introductionmentioning

confidence: 99%

A novel field plate with arcuate end for improving GaN HEMTs

Cheng,

Liu,

Luo

et al. 2024

Electronics Letters

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A new field plate (FP) is proposed for gallium nitride high‐electron‐mobility transistors (HEMTs). It features an innovative arcuate end (AE), which allows the induced charges that originally gathered at the FP end to diffuse over a wider area. Hence, not only is the electric field in the channel at the gate edge alleviated due to the induced charges, but also that concentrated at the FP end is reduced by means of AE. The simulation results indicate that by upgrading a source FP with AE, HEMT gains a 99% increase in breakdown voltage while remaining unaltered in specific on‐resistance. It also gets a 43.41% decrease in power loss during one cycle while maintaining the same breakdown voltage, which greatly contributes to enhance the efficiency of power electronic circuits.

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Millimeter-wave AlGaN/GaN HEMT breakdown voltage enhancement by a recessed float field plate

Cited by 9 publications

References 35 publications

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

Simulation Research on High-Voltage β-Ga₂O₃ MOSFET Based on Floating Field Plate

A novel field plate with arcuate end for improving GaN HEMTs

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Millimeter-wave AlGaN/GaN HEMT breakdown voltage enhancement by a recessed float field plate

Cited by 9 publications

References 35 publications

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

Simulation Research on High-Voltage β-Ga2O3 MOSFET Based on Floating Field Plate

A novel field plate with arcuate end for improving GaN HEMTs

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Product

Resources

About

Simulation Research on High-Voltage β-Ga₂O₃ MOSFET Based on Floating Field Plate