Millimeter-wave band optical single-sideband modulator using array-antenna-electrode and polarization-reversed structures with asymmetric Mach–Zehnder waveguide

Abstract

The radio-over-fiber (RoF) technology is effective in millimeter-wave (MMW) wireless systems for future broadband massive mobile communication. In constructing MMW RoF systems, a device for converting MMW signals into lightwave signals is important. In particular, a conversion device for optical single-sideband (SSB) modulation is rather attractive since the signal fading caused by the chromatic dispersion effect of an optical fiber does not occur. We have proposed a new optical SSB modulator using array-antenna-electrode and polarization-reversed structures with an asymmetric Mach-Zehnder waveguide for MMW band RoF systems. By introducing polarization-reversed structures in electrooptic modulators, it is possible to control the optical modulation phase arbitrarily. Therefore, by combining with an asymmetric Mach-Zehnder waveguide, we can obtain the SSB optical modulation in the MMW band without an external power supply. In the experiment, SSB modulation characteristics and the switching of enhanced sidebands were successfully demonstrated in the 60 GHz band.

Novel applications of plasmonics and photonics devices to sub-THz wireless

“…This normally requires separate electrical and optical high-speed components, which are complex and whose interfacing is not trivial at those high speeds. Recent efforts demonstrated Mach-Zehnder modulators directly driven by arrays of patch antennas and polarization-reversed structures, capable of converting the wireless signal to a single-sideband optical signal in the 60 GHz band [23].…”

Effect of Ni doping on the electro-optic property in K(Ta0.6Nb0.4)O3 films

“…[1][2][3][4][5][6][7] In general, the optical wave phase changes resulted from a variation in the refractive index by an electric field, including linear Pockels and quadratic Kerr effect. 8,9) The larger EO response brings more compact and the less power consumption. LiNbO 3 (LNO) with Pockels coefficient, r c , of around 30 pm V −1 is well known as the conventional LNO-based EO devices which achieves high speed and wideband modulation.…”

Influence of orientation on the electro-optic effect in epitaxial Y-doped HfO2 ferroelectric thin films

“…They can also be used for sensors and converters of electric fields up to the millimeter-wave and in the generation and detection of terahertz waves. [2][3][4][5][6][7][8][9] Moreover, ultracompact EO devices with high speed, wide bandwidth, and energy efficiency have attracted significant interest as a component to develop photonic integrated circuits to interconnect electronics and photonics. [2][3][4][5]10) To date, EO properties and their device performance for various materials, such as (Ba, Sr)TiO 3 (BST), (Pb, La)(Zr, Ti)O 3 , and relaxor ferroelectrics in bulk and thin-film forms, have been explored.…”