Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs

Pospieszalski, M.W.; Lakatosh, W.J.; Lai, R.; Tan, K. H.; Streit, D.C.; Liu, P.H.; Dia, R.M.; Velebir, J.R.

doi:10.1109/mwsym.1993.276769

Cited by 41 publications

(9 citation statements)

References 16 publications

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“…I nP-BASED high electron-mobility transistors (HEMTs) offer state-of-the-art low-noise performance and superior high-frequency performance [1]- [5]. The high mobility and carrier velocity in the InGaAs layer result in excellent performance at very low drain-to-source voltages.…”

Section: Introductionmentioning

confidence: 99%

Cryogenic wide-band ultra-low-noise if amplifiers operating at ultra-low DC power

Wadefalk

Mellberg

Angelov

et al. 2003

IEEE Trans. Microwave Theory Techn.

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122

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This paper describes cryogenic broad-band amplifiers with very low power consumption and very low noise for the 4-8-GHz frequency range. At room temperature, the two-stage InP-based amplifier has a gain of 27 dB and a noise temperature of 31 K with a power consumption of 14.4 mW per stage, including bias circuitry. When cooled to 15 K, an input noise temperature of 1.4 K is obtained at 5.7 mW per stage. At 0.51 mW per stage, the input noise increases to 2.4 K. The noise measurements have been repeated at different laboratories using different methods and are found consistent.

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Section: Introductionmentioning

confidence: 99%

Cryogenic wide-band ultra-low-noise if amplifiers operating at ultra-low DC power

Wadefalk

Mellberg

Angelov

et al. 2003

IEEE Trans. Microwave Theory Techn.

Self Cite

122

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“…Ultralow-noise InP HEMTs have been demonstrated and fabricated for cryogenic temperature operation [244][245][246][247][248][249][250][251]. .…”

Section: Developments In Indium Phosphide Hemtsmentioning

confidence: 99%

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

Ajayan

Nirmal

2015

Superlattices and Microstructures

131

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“…1 im gate length InP HFET and includes a modest correction to the receiver noise temperature estimated from typical losses of matching circuits, waveguides, horns, dewar windows, etc. 3. 3.…”

Section: Hfet Amplifiersmentioning

confidence: 99%

<title>Receivers for the Millimeter Array</title>

et al. 1998

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The Millimeter Array1, being planned by the National Radio Astronomy Observatory (NRAO) in conjunction with the radio astronomy community, will have almost complete coverage of the observable spectrum from 30 to 950 GHz. This paper discusses the choice of frequency bands and describes our present concept of the main receiver components for the MMA, including HFET (heterostructure field-effect transistor) amplifiers for the lower frequencies and sideband separating SIS (superconductor-insulator-superconductor) mixers for higher frequencies.Recent progress on HFET amplifiers has shown them to be competitive with SIS mixers for astronomical applications at frequencies up to -100 GHz. The exact crossover frequency between HFET and 515 receivers in the context of the MMA is not yet determined. HFET receivers for the lower frequencies will be used not only for direct observations, but also for rapid calibration of instrumental and atmospheric phase in "fast-switching" observing mode. We have already developed cryogenic HFET amplifiers for frequencies up to 1 10 GHz.Sideband-separating SIS mixers will improve the sensitivity in many spectral line measurements by greatly reducing the effect of atmospheric noise in the image sideband. We have developed an experimental 200-300 GHz sideband-separating receiver in which all the RF components-quadrature hybrid, LO power splitter, LO couplers, and SIS junctions-are on a single quartz chip. To reduce the effect of sideband noise from the LO source, and also substantially reduce the required LO power, we are developing a balanced SIS mixer, also on a single chip. We plan ultimately to develop a balanced, sidebandseparating SIS mixer on a single chip. A first-IF amplifier stage inside the SIS mixer block is expected to eliminate the need for an IF isolator in an 515 receiver, thus permitting a 4-12 GHz IF.

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Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs

Cited by 41 publications

References 16 publications

Cryogenic wide-band ultra-low-noise if amplifiers operating at ultra-low DC power

Cryogenic wide-band ultra-low-noise if amplifiers operating at ultra-low DC power

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

<title>Receivers for the Millimeter Array</title>

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