Millimeter wave detection on gated selectivelly doped semiconductor structure

Investigation of detection properties of planar microwave diodes based on A3B5 semiconductor compounds in millimeter–wavelength range

“…The gate-influenced increase of voltage sensitivity in asymmetrically and symmetrically shaped 2DEG MW diodes fabricated based on selectively-doped AlGaAs/GaAs heterostructure with a δ-doped AlGaAs barrier was investigated in (Sužiedėlis et al, 2006(Sužiedėlis et al, , 2007a. The diode gate was created as an extension of its metallic contact for several micrometers above the 2DEG channel, causing a higher non-uniformity of the electric field in the vicinity of the neck of the sample (Seliuta et al, 2007a).…”

“…A weak frequency dependence on voltage sensitivity was observed in the X-and K a -frequency ranges in the case of the symmetrical structure (0.35 V/W), while in the case of the asymmetrical structure, the decrease in voltage sensitivity was inherent at higher frequencies. It was associated with two competing detection mechanisms: the bigradient detection and the MW detection that arises due to charge inhomogeneity created by the gate introduced above the 2DEG layer near the contact of the diode (Sužiedėlis et al, 2007a;Seliuta et al, 2007a). It was suggested that the possibility of detecting electromagnetic radiation in the subMMW wavelength range should be expected in the case of symmetric gated selectively-doped structures.…”