Millimeters long super flexible Mn5Si3@SiO2 electrical nanocables applicable in harsh environments

Abstract

Providing high performance electrical nano-interconnects for micro-nano electronics that are robust in harsh environments is highly demanded. Today, electrical nano-interconnects based on metallic nanowires, e.g. Ag and Cu, are limited by their positive physicochemical reactivity and ductility under large strain (i.e. irreversible dislocations and local necking-down elongation) at high temperatures or in strong oxidizing and acidic environments. Herein, to overcome these limitations, high-quality millimetre-sized soft manganese-based silicide (Mn 5 Si 3 @SiO 2 ) nanowire nanocables are designed via a glassy Si-Mn-O matrix assisted growth. The proposed nanocables exhibit good electrical performance (resistivity of 1.28 to 3.84 × 10 -6 Ωm and maximum current density 1.22 to 3.54 × 10 7 A cm −2 ) at temperatures higher than 317°C in air atmosphere, strongly acidic (HCl, PH=1.0) and oxidizing (H 2 O 2 , 10%) ambient, and under complex electric field. The proposed Mn 5 Si 3 @SiO 2 nanocables, which withstand a strain of 16.7% free of failure, could be exploited for diverse applications in flexible electronics and complex wiring configurations.

Low-temperature electronic transport of manganese silicide shell-protected single crystal nanowires for nanoelectronics applications

“…Nowadays, the common method to grow manganese silicide nanowires is metal-organic chemical vapor deposition (MOCVD). 9,21,22 MOCVD favors a single crystalline structure, unlike for Mn 5 Si 3 nanorods obtained via solid-state reaction route. 23 However, to achieve a core-shell conguration with MOCVD, a two-steps fabrication route is required.…”

“…Metallic nanowires have been suggested as building blocks in areas such as non-volatile memory, 1 optoelectronics, 2,3 exible and stretchable electronic devices, 2-5 nanomedicine, [6][7][8] and nanoelectronics. 2,3,9 In the latter case, they are promising candidates to replace indium-tin oxide (ITO) conducting electrodes. 10 Despite the widespread technological application of these electrodes, such as touch screens and displays, some shortcomings impair their application for the newest technological trends such as exible devices.…”

“…Sun et al have demonstrated that a SiO 2 protective layer around long Mn 5 Si 3 nanocables allows conduction under high temperatures, in acidic, or oxidizing environments and permits good system exibility without creating defects that would degrade their electrical performance. 9 In the bulk form, this alloy presents a complex magnetic structure exhibiting two transitions: a non-collinear antiferromagnetic phase transition (AF 1 ) at T 1 z 65 K, followed by a collinear one (AF 2 ) occurring at T 2 z 105 K. [16][17][18] Both transitions arise from crystallographic phase transitions: expanded orthorhombic to regular (AF 1 ), until hexagonal (AF 2 ). Due to its itinerant electron character, the Mn 5 Si 3 compound electronic behavior is expected to be strongly inuenced by its magnetic order, which is anisotropic below T 2 .…”

Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties

“…Each Te atom is covalently bonded with its two nearest neighbors on the same chain, and the interchain interaction is weaker than the covalent bond [74]. A systematic study on strain engineering the 1D Te's anisotropic properties will be helpful for providing fundamental insights of the coupling between mechanical strains and various internal degrees of freedom in Te nanomaterials [76,77,80] and other materials sharing similar 1D chain structures [84][85][86], as well as enabling the design and development of novel smart devices capable of actively interacting with the working environment [31,87,88].…”

Spin-waves in the collinear antiferromagnetic phase of Mn$_\bf{5}$Si$_\bf{3}$

“…Its interesting properties, such as the complex magnetic structure 2 , the anomalous Hall effect 3 , and the inverse magnetocaloric effect 4 have been attributed to an instability of the Mn magnetic moments. It is also worth mentioning that in nanoparticle 5 and nanowire 6 form, Mn 5 Si 3 is considered to have great potential in future electronic and spintronic devices. Despite the intense research activity over the past decades [2][3][4][7][8][9][10][11][12][13][14][15][16] , many open questions remain regarding the minimal magnetic model Hamiltonian, the role of the spin fluctuations in the magnetically ordered phases and which Mn site is responsible for them.…”