MIMC reliability and electrical behavior defined by a physical layer property of the dielectric

Ackaert, J.; Charavel, Rémy; Dhondt, K.; Vlachakis, B.; Schepper, L. De; Millecam, M.; Vandevelde, E.; Bogaert, Pierre; Iline, A.; Backer, E. De; Vlad, Alexandru; Raskin, J.-P.

doi:10.1016/j.microrel.2008.06.043

Cited by 8 publications

(6 citation statements)

References 9 publications

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“…In the mentioned study, the bias at which the measured thermally stimulated depolarization current (TSDC) was zero in a MIM capacitor implementing PECVD SiN x films was found to decrease with decreasing the nitrogen content in the SiN x film, a behavior which is attributed to an increase in the leakage current. The results obtained in this study are also in good agreement with those in [60], where increasing the gas ratio (SiH 4 /NH 3 ) was reported to result in increasing the leakage current density. Finally, it was reported that SiN x films with more silicon content exhibit a smaller injected charge density and faster charge decay [7], which agree with the results related to the influence of the gas ratio presented in this study.…”

Section: B Effect Of Reactive Gas Ratiosupporting

confidence: 90%

“…This is basically attributed to the formation of nanoclusters [55]- [58] and traps which allow the charge transport through conductive percolation tunneling paths and hopping through defect states [59]. Increasing the silicon content also results in increasing the concentration of defects [20] and leads to a larger number of charge-trapping centers [60]. This results in increasing the density of traps, as well as the probability of percolation and hopping.…”

Section: B Effect Of Reactive Gas Ratiomentioning

confidence: 99%

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Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy

Zaghloul

Papaioannou

Bhushan

et al. 2011

J. Microelectromech. Syst.

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The dependence of the electrical properties of silicon nitride, which is a commonly used dielectric in nanoand micro-electromechanical systems (NEMS and MEMS), on the deposition conditions used to prepare it and, consequently, on material stoichiometry has not been fully understood. In this paper, the influence of plasma-enhanced chemical vapor deposition conditions on the dielectric charging of SiN x films is investigated. The work targets mainly the dielectriccharging phenomenon which constitutes a major failure mechanism in electrostatically driven NEMS/MEMS devices and particularly in capacitive MEMS switches. The charging/ discharging processes are studied using two nanoscale characterization techniques: Kelvin probe force microscopy (KPFM) and, for the first time, force-distance curve (FDC) measurements. KPFM is used to investigate dielectric charging at the level of a single asperity, while FDC is employed to measure the multiphysics coupling between the charging phenomenon and tribological issues, mainly meniscus force. The electrical properties of the SiN x films obtained from both techniques show a very good correlation. X-ray photoelectron spectroscopy and Fourier transform infrared Manuscript

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Section: B Effect Of Reactive Gas Ratiosupporting

confidence: 90%

Section: B Effect Of Reactive Gas Ratiomentioning

confidence: 99%

Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy

Zaghloul

Papaioannou

Bhushan

et al. 2011

J. Microelectromech. Syst.

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“…In fact, the leakage of all samples was in the same range and shared nearly identical breakdown times. A decrease of SILC over time indicates charge trapping [14]. In Fig.…”

Section: Resultsmentioning

confidence: 94%

Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-$k$ Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

Knebel

Schroeder

Zhou

et al. 2014

IEEE Trans. Device Mater. Relib.

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This paper presents the results of I-V and constant-voltage-stress measurements on symmetrical dielectric ZrO 2 /Al 2 O 3 /ZrO 2 film stacks of different thicknesses. The films were grown by atomic layer deposition and structured into cylindrical metal-insulator-metal capacitors. The temperaturedependent leakage characteristics and time-dependent dielectric breakdown behaviors were investigated. A correlation was found between the structural composition, the defect density, and the conduction mechanism.Index Terms-High-k, leakage model, metal-insulator-metal (MIM) capacitor, reliability, ZrO 2 .

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“…Higher dielectric constant and high voltage breakdown are the key parameters for building performing electrostatic energy storage devices. [369][370][371][372] On the opposite side of the ultra-thin fi lm battery spectrum are the ultra-thick or ultra-high energy cells that rely on high capacity electrodes characterized by extremely thick electrodes. Probably the easiest way to the fruition of ultra-high energy cells is to increase the amount of active material by increasing the thickness of the electrodes.…”

Section: Ultra-thin and Ultra-thick Batteriesmentioning

confidence: 99%

Design Considerations for Unconventional Electrochemical Energy Storage Architectures

Vlad

Singh

Galande

et al. 2015

Advanced Energy Materials

300

204

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all need to be used in conjugation with an energy storage system to provide smooth power leveling. Currently, electrochemical energy storage systems are by far the most optimal solutions for powering a broad range of technologies, expanding from compact and light-weighted portable electronic devices to stationary gridscale energy storage applications. [3][4][5][6] These energy storage devices (batteries and supercapacitors) store the available electrical energy in the form of chemical energy and release it whenever needed, by simply reversing the electrochemical reaction. [7][8][9][10][11] Among various available battery chemistries, lithium batteries and supercapacitors are the most promising technologies. [ 7,[9][10][11][12][13][14][15][16][17][18][19][20] Ever since the realization of the fi rst electrochemical energy storage cell by Alessandro Volta (end of 17th century), the working principle and its function has changed very little. [ 21,22 ] Basically, two redox couples (or charge storage electrodes), electrically and physically separated, are bridged by an ion conducting medium to constitute an electrochemical cell. This holds true also for modern Li-ion batteries, although the chemistry involved is much more complex. During operation, the electrons are transferred through an external circuit while ions shuttle through the electrolyte to counterbalance the depleted charge at the electrodes. [ 23 ] So far, much of the effort has been directed towards improvement of the energy and power characteristics by downsizing the active components, re-engineering the current collectors and separators, as well as fi ne-tuning the Batteries have become fundamental building blocks for the mobility of modern society. Continuous development of novel battery chemistries and electrode materials has nourished progress in building better batteries. Simultaneously, novel device form factors and designs with multi-functional components have been proposed, requiring batteries to not only integrate seamlessly to these devices, but to also be a multi-functional component for a multitude of applications. Thus, in the past decade, along with developments in the component materials, the focus has been shifting more and more towards novel fabrication processes, unconventional confi gurations, and additional functionalities. This work attempts to critically review the developments with respect to emerging electrochemical energy storage confi gurations, including, amongst others, paintable, transparent, fl exible, wire or cable shaped, ultra-thin and ultra-thick confi gurations, as well as hybrid energy storage-conversion, or graphene-incorporated batteries and supercapacitors. The performance requirements are elaborated together with the advantages, but also the limitations, with respect to established electrochemical energy storage technologies. Finally, challenges in developing novel materials with tailored properties that would allow such confi gurations, and in designing easier manufacturing techniques that can be widely adopted ar...

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MIMC reliability and electrical behavior defined by a physical layer property of the dielectric

Cited by 8 publications

References 9 publications

Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy

Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy

Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-$k$ Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

Design Considerations for Unconventional Electrochemical Energy Storage Architectures

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