2018
DOI: 10.1002/ctpp.201700213
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Mineralization of flexible mesoporous TiO2 photoanodes using two low‐temperature dielectric barrier discharges in ambient air

Abstract: Two types of dielectric barrier discharges (DBDs), volume DBD (called Industrial Corona) and coplanar DBD, were used for low temperature (70 • C) atmospheric pressure plasma mineralization of mesoporous methyl-silica/titanium dioxide nanocomposite photoanodes. The photoanodes with a thickness of approx. 300 nm were inkjet-printed on flexible polyethylene terephthalate (PET) foils. Plasma treatments of both DBDs led to changes in the chemical stoichiometry and morphology of the mesoporous photoanodes, resulting… Show more

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Cited by 8 publications
(8 citation statements)
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“…61 Such increases in dielectric constant may well lead to higher capacity in the silica surface, manifesting as higher photocurrent, as measured in the coating in a previous study by the authors. 39 Furthermore, plasma treatment of m-TiO 2 shifts the valance and conduction band of the m-TiO 2 , 62 which may, in the case of the m-TiO 2 /perovskite interface, result in better band alignment of m-TiO 2 /perovskite. Consequently, this may also improve carrier injection from the perovskite layer into m-TiO 2 and enhance V OC .…”
Section: Surface Analysismentioning
confidence: 99%
“…61 Such increases in dielectric constant may well lead to higher capacity in the silica surface, manifesting as higher photocurrent, as measured in the coating in a previous study by the authors. 39 Furthermore, plasma treatment of m-TiO 2 shifts the valance and conduction band of the m-TiO 2 , 62 which may, in the case of the m-TiO 2 /perovskite interface, result in better band alignment of m-TiO 2 /perovskite. Consequently, this may also improve carrier injection from the perovskite layer into m-TiO 2 and enhance V OC .…”
Section: Surface Analysismentioning
confidence: 99%
“…From Figure 4, it can be seen that the work function increases from 4.4 to 5.3 eV after electrochemical treatment. 34 The decrease in Fermi level energy indicates the change of n-type semiconductor behavior to p-type semiconductor (see the inset in Figure 4). The band gap of the materials is calculated from the UV spectrum (see Figure S9a,b).…”
Section: Resultsmentioning
confidence: 99%
“…The temperature of the plasma unit during the treatment was approximately 60 °C. 33 , 34 Treatment times were 1, 2, 4, and 8 s, and samples were ordered in terms of “PVPT-treatment time”.…”
Section: Materials and Methodsmentioning
confidence: 99%