Endowed with a narrow bandgap and relatively high carrier mobility, bismuth sulfide (Bi 2 S 3 ) has attracted attention in the field of gas sensors. However, pristine Bi 2 S 3 still has limitations on the suboptimal sensitivity and recovery performance at room temperature. Herein, we engineered Bi 2 S 3 /vanadium-based MXene (V 2 CT x ) Schottky heterojunctions by introducing V 2 CT x MXene, which has unique electrical properties, a large specific surface area, and abundant functional groups. Bi 2 S 3 nanorod (NR)/ V 2 CT x nanosheet (NS) 1D/2D heterostructure demonstrates an improved response (∼190%) to 20 ppm of nitrogen dioxide (NO 2 ) at room temperature (25 °C), which is 6.7 times that of the pristine Bi 2 S 3 sensor. The optimized Bi 2 S 3 NR/V 2 CT x NS sensors exhibit a fully recoverable response, with outstanding repeatability and a short recovery time of 103 s to 20 ppm of NO 2 under 365 nm ultraviolet illumination. In addition, Bi 2 S 3 /V 2 CT x heterostructures possess desirable sensing performances, including high selectivity, outstanding long-term stability, and reliability at various humidity conditions for NO 2 detection at room temperature. The photosensitive property of Bi 2 S 3 and the construction of Bi 2 S 3 /V 2 CT x Schottky junctions improve the gas sensing performance and facilitate electron transfer. The photogenerated holes recombine with the adsorbed NO 2 − ionized molecules on the surface to neutralize and release NO 2 by the UV-cleaning effect. In addition, the photogenerated electrons combine with the adsorbed oxygen molecules to form the oxygen species O 2 − (ads). This work provides significant research potential for developing high-performance metal sulfide/MXene-based sensing materials at room temperature.